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PDF S25FL128P Fiche technique - Cypress Semiconductor

Numéro de référence S25FL128P
Description 128-Mb 3.0 V Flash Memory
Fabricant Cypress Semiconductor 
Logo Cypress Semiconductor Logo 



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S25FL128P Datasheet, Description
S25FL128P
128-Mb 3.0 V Flash Memory
This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes
S25FL128P. This is the factory-recommended migration path. Please refer to the S25FL128S data sheet for
specifications and ordering information.
Distinctive Characteristics
Architectural Advantages
Single power supply operation
– Full voltage range: 2.7V to 3.6V read and program operations
Memory Architecture
– 128Mb uniform 256 KB sector product
– 128Mb uniform 64 KB sector product
Program
– Page Program (up to 256 bytes) in 1.5 ms (typical)
– Faster program time in Accelerated Programming mode
(8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)
Erase
– 2 s typical 256 KB sector erase time
– 0.5 s typical 64 KB sector erase time
– 128 s typical bulk erase time
– Sector erase (SE) command (D8h) for 256 KB sectors; (20h or
D8h) for 64KB sectors
– Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for
64KB sectors
Cycling Endurance
– 100,000 cycles per sector typical
Data Retention
– 20 years typical
Device ID
– RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read
manufacturer and device ID information
– RES command one-byte electronic signature for backward
compatibility
Process Technology
– Manufactured on 0.09 µm MirrorBit® process technology
Package Option
– Industry Standard Pinouts
– 16-pin SO package (300 mils)
– 8-Contact WSON Package (6 x 8 mm)
Performance Characteristics
Speed
– 104 MHz clock rate (maximum)
Power Saving Standby Mode
– Standby Mode 200 µA (max)
– Deep Power Down Mode 3 µA (typical)
Memory Protection Features
Memory Protection
– WP#/ACC pin works in conjunction with Status Register Bits to
protect specified memory areas
– 256 KB uniform sector product:
Status Register Block Protection bits (BP2, BP1, BP0) in status
register configure parts of memory as read-only.
– 64KB uniform sector product:
Status Register Block Protection bits (BP3, BP2, BP1, BP0) in
status register configure parts of memory as read-only
Software Features
– SPI Bus Compatible Serial Interface
Hardware Features
x8 Parallel Programming Mode (for 16-pin SO package only)
General Description
The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of
256 KB memory, or 256 sectors of 64 KB memory.
The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be
programmed in-system with the standard system 3.0 volt VCC supply.
The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase
and Bulk Erase commands.
Each device requires only a 3.0 volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and
regulated voltages are provided for the program operations. This device requires a high voltage supply to WP#/ACC pin for the
Accelerated Programming mode.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-00646 Rev. *L
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 18, 2015
S25FL128P Fiche technique
1. Block Diagram
SRAM
S25FL128P
PS
Logic
Array - L
X
D
E Array - R
C
RD DATA PATH
IO
Document Number: 002-00646 Rev. *L
Page 4 of 45

3 Page

S25FL128P pdf
S25FL128P
5. Ordering Information
This product is not recommended for new and current designs. For new and current designs, S25FL128S supersedes S25FL128P.
This is the factory-recommended migration path. Please refer to the S25FL128S data sheet for specifications and ordering
information.
The ordering part number is formed by a valid combination of the following:
S25FL 128 P 0X M F I 00 1
PACKING TYPE
0 = Tray
1 = Tube
3 = 13” Tape and Reel
MODEL NUMBER (Additional Ordering Options)
00 = Uniform 64 KB sector product
01 = Uniform 256 KB sector product
TEMPERATURE RANGE
I = Industrial (–40°C to + 85°C)
PACKAGE MATERIALS
F = Lead (Pb)-free
PACKAGE TYPE
M = 16-pin SO package
N = 8-pin WSON package
SPEED
0X = 104 MHz
DEVICE TECHNOLOGY
P = 0.09 µm MirrorBit® Process Technology
DENSITY
128= 128 Mbit
DEVICE FAMILY
S25FL
Cypress Memory 3.0 Volt-only, Serial Peripheral Interface (SPI) Flash Memory
Table 5.1 S25FL128P Valid Combinations Table
S25FL128P Valid Combinations
Base Ordering
Part Number
Speed Option Package & Temperature Model Number
00
S25FL128P 0X MFI, NFI
01
Packing Type
0, 1, 3
Note
Package marking omits leading “S25” and speed, package, and model number form.
Package Marking
(See Note)
FL128P + I + F
FL128P + I + FL
5.1 Valid Combinations
Table 5.1 lists the valid combinations configurations planned to be supported in volume for this device.
Document Number: 002-00646 Rev. *L
Page 7 of 45

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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