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Data sheet SSP4N60 PDF ( Fiche technique )

Numéro de référence Description Fabricant PDF
4 SSP4N60   (SSP4N55 / SSP4N60) N-Channel Power MOSFET

SSP4N60 - Samsung Electronics
Samsung Electronics
SSP4N60 datasheet
3 SSP4N60AS   Advanced Power MOFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.) SSP4N60AS BVDSS = 600 V RDS(on)

SSP4N60AS - Fairchild Semiconductor
Fairchild Semiconductor
SSP4N60AS datasheet
2 SSP4N60AS   Advanced Power MOFET

SSP4N60AS - Samsung Electronics
Samsung Electronics
SSP4N60AS datasheet
1 SSP4N60B   600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize

SSP4N60B - Fairchild Semiconductor
Fairchild Semiconductor
SSP4N60B datasheet



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Numéro de référence Description Fabricant PDF
AMS116

100mA LOW DROPOUT VOLTAGE REGULATOR

Advanced Monolithic Systems
Advanced Monolithic Systems
PDF
APD360

Low voltage dual Schottky rectifier

Diodes
Diodes
PDF

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