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Datasheet ME4856 PDF ( Fiche technique )

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2 ME4856   N-Channel 30-V(D-S) MOSFET

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

ME4856 - Matsuki
Matsuki
ME4856 datasheet
1 ME4856-G   N-Channel 30-V(D-S) MOSFET

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These

ME4856-G - Matsuki
Matsuki
ME4856-G datasheet


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