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Datasheet IRFZ44N PDF ( Fiche technique ) |
Numéro de référence | Description | Fabricant | ||
11 | IRFZ44N | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed f |
![]() INCHANGE |
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10 | IRFZ44N | Power MOSFET PD - 94053 IRFZ44N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 17.5mΩ G S ID = 49A Description Advanced HEXFET® Power |
![]() International Rectifier |
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9 | IRFZ44N | N-CHANNEL Power MOSFET APPLICATION Buck Converter High Side Switch DC motor control , Ups ...etc , & other Application VDSS 55V RDS(ON) Max. 17.5mȍ PIN CONFIGURATION TO-220 Front View ID 50A IRFZ44N N-CHANNEL Power MOSFET FEATURES Ultra Low ON Resistance Low Gate Charge Dynamic d |
![]() Matsu |
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8 | IRFZ44N | Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-220AB |
![]() New Jersey Semiconductor |
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7 | IRFZ44N | N-channel enhancement mode TrenchMOS transistor Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device featur |
![]() NXP |
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Numéro de référence | Description | Fabricant | |
AMS116 | 100mA LOW DROPOUT VOLTAGE REGULATOR |
![]() Advanced Monolithic Systems |
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APD360 | Low voltage dual Schottky rectifier |
![]() Diodes |
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