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Datasheet C5906 PDF ( Fiche technique )

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2 C5906   Silicon NPN transistor

Silicon NPN transistor epitaxial type C5906 C5906 [ Applications ] High voltage, High current [ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed [ Absolute

C5906 - PHENITEC SEMICONDUCTOR
PHENITEC SEMICONDUCTOR
C5906 datasheet
1 C5906   Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max

C5906 - Toshiba
Toshiba
C5906 datasheet


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