DataSheet.fr Fiche technique


Data sheet 2SD1662 PDF ( Fiche technique )

Numéro de référence Description Fabricant PDF
2 2SD1662   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 1.5V

2SD1662 - Inchange Semiconductor
Inchange Semiconductor
2SD1662 datasheet
1 2SD1662   Silicon NPN Triple Diffused Type TRANSISTOR

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm · High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.5 V (max) (IC = 15

2SD1662 - Toshiba Semiconductor
Toshiba Semiconductor
2SD1662 datasheet



Liens de partage :
[1] 

Fiche de données de référence

Numéro de référence Description Fabricant PDF
AMS116

100mA LOW DROPOUT VOLTAGE REGULATOR

Advanced Monolithic Systems
Advanced Monolithic Systems
PDF
APD360

Low voltage dual Schottky rectifier

Diodes
Diodes
PDF

www.DataSheet.fr    |   2020    |  Contactez-nous   |  Sitemap