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Data sheet 2SD1606 PDF ( Fiche technique )

Numéro de référence Description Fabricant PDF
2 2SD1606   Silicon NPN Triple Diffused

2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 2.6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1606 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emi

2SD1606 - Hitachi Semiconductor
Hitachi Semiconductor
2SD1606 datasheet
1 2SD1606   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1606 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 3A APPLICATIONS ·Designed for low frequency power amplifie

2SD1606 - Inchange Semiconductor
Inchange Semiconductor
2SD1606 datasheet



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Fiche de données de référence

Numéro de référence Description Fabricant PDF
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