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Datasheet 2SC5906 PDF ( Fiche technique )

Numéro de référence Description Fabricant PDF
1 2SC5906   Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max

2SC5906 - Toshiba
Toshiba
2SC5906 datasheet

2SC59 Fiches techniques ( Datasheet )

Numéro de référence Description Fabricant PDF
2SC5949

Silicon NPN Triple Diffused Type Transistor

Toshiba Semiconductor
Toshiba Semiconductor
2SC5949 pdf
2SC5913

Silicon NPN triple diffusion mesa type

Panasonic Semiconductor
Panasonic Semiconductor
2SC5913 pdf
2SC5906

Silicon NPN Epitaxial Type Transistor

Toshiba
Toshiba
2SC5906 pdf
2SC5964

Bipolar Transistor

ON Semiconductor
ON Semiconductor
2SC5964 pdf
2SC5900

Silicon NPN Transistor

Inchange Semiconductor
Inchange Semiconductor
2SC5900 pdf
2SC5949

Silicon NPN Transistor

Inchange Semiconductor
Inchange Semiconductor
2SC5949 pdf
2SC5974A

SMALL-SIGNAL TRANSISTOR

Isahaya Electronics Corporation
Isahaya Electronics Corporation
2SC5974A pdf
2SC5934

PNP / NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device
Sanyo Semicon Device
2SC5934 pdf


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