XL1225 Fiche technique

XL1225 Rev.E Mar.-2016 描述 / Descriptions TO-92 塑封封装单向可控硅。Thyristor in a TO-92 Plastic Package. 特征 / Features 低成本，高容量。 Intended for low cost high volume applications. 用途 / Applications 应用于高压控制电路。 Applied to high Voltage control cir

UNISONIC TECHNOLOGIES CO.,LTD. XL/ML1225 MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. SCR  ORDERING INFORMATION Ordering Nu

AVIC TECHNOLOGY CO.,LTD. TO-92 Plastic-Encapsulate Transistors XL1225 FEATURES TO-92 Silicon Planar pnpn Thyristor 1. CATHODE 2. GATE Current-IGT: ITRMS: VDRM: 120 0.6 400 µA 3. ANODE A 1 2 3 V Operating and storage junction temperature range TJ, Tstg : -55℃ to +1

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors XL1225 Silicon Planar pnpn Thyristor TO-92 FEATURES Current-IGT: 120 µA ITRMS: 0.6 A VDRM: 400 V 1. CATHODE 2. GATE 3. ANODE 123 Operating and storage junction temperature range TJ, Tstg : -55℃ to +150℃ ELECTRICAL CHARA

TM HPM HAOPIN MICROELECTRONICS CO.,LTD. XL1225 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrate

SCR XL 1225 / ML 1225 0.6A 300V (ML1225) / 400V (XL1225), IGT < 200 µA DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications. ABSOLUTE MAXIMUM RATING Parameter Part No. Symbol Min. Max R

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS ML1225 XL1225 TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere Description These Silicon Controlled Rectifiers are high performance planar diffused PNPN devices. They