TT2190 Fiche technique

TT2190 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220F Plastic Package.  特征 / Features 开关速度快、高击穿电压(VCBO=1500V)、可靠性高、采用 MBIT 技术、内置阻尼二极管。 High Speed,

isc Silicon NPN Power Transistor TT2190 DESCRIPTION ·High speed. ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 4.5A ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA

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Ordering number : ENN7551 TT2190LS NPN Triple Diffused Planar Silicon Transistor TT2190LS Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions unit : mm 2079D [TT2190LS] 10.0 3.2 3.5 7.2 4.5 2.8 High speed. High breakdown voltage (VCBO=1500V). High r