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Datasheet TIP31 PDF

Numéro Numéro de référence Description Fabricant PDF
79 TIP31   Epitaxial Planar NPN Transistor

Epitaxial Planar NPN Transistor FEATURES  Complementary to TIP32/32A/32B/32C. Pb Lead-free Production specification TIP31/31A/31B/31C TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter
TIP31 - GME
GME
TIP31 datasheet
78 TIP31   NPN TRANSISTORS

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS TIP31, A, B, C NPN TIP32, A, B, C PNP TO-220 Plastic Package Complementary Silicon Transistors intended for a wide variety of Switching and Amplifier Applications, Series and Shunt
TIP31 - CDIL
CDIL
TIP31 datasheet
77 TIP31   NPN Transistor

isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Complement to Type TIP32 ·Minimum Lot-to-Lot variations for robust device performance an
TIP31 - INCHANGE
INCHANGE
TIP31 datasheet
76 TIP31   NPN Epitaxial Silicon Transistor

TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to TIP32/TIP32A/TIP32B/TIP32C July 2008 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Paramet
TIP31 - Fairchild Semiconductor
Fairchild Semiconductor
TIP31 datasheet
75 TIP31   Silicon NPN Power Transistors

Silicon NPN Power Transistors Product Specification TIP31/31A/31B/31C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- TIP31; 60V(Min)- TIP31A 80V(Min)- TIP31B; 100V(Min)- TIP31C ·Complement to Type TIP32/32A/32B/32C APPLICATI
TIP31 - SavantIC
SavantIC
TIP31 datasheet
74 TIP31   NPN Epitaxial Silicon Transistor

TIP31/TIP31A/TIP31B/TIP31C — NPN Epitaxial Silicon Transistor TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to TIP32/TIP32A/TIP32B/TIP32C July 2008 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Paramet
TIP31 - Fairchild Semiconductor
Fairchild Semiconductor
TIP31 datasheet
73 TIP31   NPN SILICON POWER TRANSISTORS

TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the TIP32 Series ● 40 W at 25°C Case Temperature ● 3 A Continuous Collector Current ● 5 A Peak Collector Current ● Customer-Specified Selections Available TO-220 PACKAGE (TOP VIEW) B1 C2 E3
TIP31 - Bourns
Bourns
TIP31 datasheet
72 TIP31   SILICON NPN POWER TRANSISTORS

TIP31 TIP31A TIP31B TIP31C SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR TIP31 series devices are silicon NPN epitaxial-base power transistors designed for power amplifier and high speed switching applications. MARKING: FULL PART NUMBER T
TIP31 - Central Semiconductor
Central Semiconductor
TIP31 datasheet
71 TIP31   PNP Epitaxial Silicon Darlington Transistor

TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C ◎ SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C Medium Power Linear Switching Applications - Complement to TIP32/32A/32B/32C Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATIN
TIP31 - SEMIHOW
SEMIHOW
TIP31 datasheet
70 TIP31   NPN Power Transistors

Power Transistors (NPN) TIP31/A/B/C Power Transistors (NPN) Features • Low power audio amplifier and low current, • High speed switching applications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-220, Plastic Package Solderable per MIL-STD-202, Method 208 0.08 ounces, 2.24 g
TIP31 - TAITRON
TAITRON
TIP31 datasheet
69 TIP31   Complementary Silicon Plastic Power Transistors

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. • Collector-Emitter Saturation Voltage - VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector-Emitt
TIP31 - ON Semiconductor
ON Semiconductor
TIP31 datasheet
68 TIP31   NPN Plastic-Encapsulate Transistor

Elektronische Bauelemente TIP31 / TIP31A / TIP31B / TIP31C NPN Plastic-Encapsulate Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Medium Power Linear Switching Applications TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) P
TIP31 - SeCoS
SeCoS
TIP31 datasheet
67 TIP31   High Power Bipolar Transistor

TIP31, TIP32 High Power Bipolar Transistors Features: • Collector - emitter sustaining voltage - VCEO (sus) = 60 V (Minimum) - TIP31A, TIP32A = 100 V (Minimum) - TIP31C, TIP32C • Collector - emitter sustaining voltage - VCE (sat) = 1.2 V (Maximum) at IC = 3 A • Current gain - bandwidth product
TIP31 - Multicomp
Multicomp
TIP31 datasheet
66 TIP31   Complementary Silicon Power Transistor

SEMICONDUCTOR TIP31 (NPN) Series TIP32 (PNP) Series RRooHHSS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio hFE TO-220AB packa
TIP31 - nELL
nELL
TIP31 datasheet


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