STI Fiche technique

STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB 13 D2PAK TAB TAB 23 1 DPAK TAB 123 TO-220FP 123 I2PAK 1 23 TO-220 D(2, TAB) G(1) S(3) AM01475v1_n

STi1010 Single-chip worldwide iDTV processor Data Brief Features ■ ■ ■ ■ ■ ■ ■ 32-Bit RISC ST40 CPU, 266 MHz, 480 MIPs DDR2 unified memory interface, 250 MHz clock Transport stream demultiplexer with DES, DVB and Multi2 descrambler CableCard and DVB-CI interface

STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.

STI10NM60N N-channel 600 V, 0.53 Ω typ.,10 A MDmesh™ II Power MOSFET in I²PAK package Datasheet - obsolete product Features TAB )1 2 3 t(sI2PAK roducFigure 1. Internal schematic diagram te P'7$% - Obsole*roduct(s)6 $0Y Order code STI10NM60N VDS RDS(on) @TJmax max. 650

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 6.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80 N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247 Features Order codes VDSS RDS(on) max RDS(on)*Qg ID STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80 < 0.40 Ω 14Ω*nC 11 A ■ Low

STB120NH03L - STI120NH03L STP120NH03L N-channel 30V - 0.005Ω - 60A - TO-220 / D2PAK / I2PAK STripFET™ Power MOSFET for DC-DC conversion General features Type STB120NH03L STP120NH03L STI120NH03L VDSS 30V 30V 30V RDS(on) <0.0055Ω <0.0055Ω <0.0055Ω ID 60(1) 60(1) 60(1) TO

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 Ω, 8.5 A MDmesh™ V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features Type STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 VDSS @ RDS(on) TJmax max ID PTOT 710 V 8.5 A 8.5 A(1) < 0.43 Ω 8.5 A 8

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSO

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V

STI13005-1 High voltage fast-switching NPN power transistor Preliminary data Features ■ STI13005-1 is opposite pin out versus standard IPAK package ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Switch mode power supplies (AC-DC con

STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages TAB Features 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP1

Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 360mΩ(Max) ·100% avalanche tested ·Low input capacitance and gate charge ·Minimum Lot-to-Lot variations for robust device per