SSP4N60 Fiche technique
Datasheet SSP4N60 PDF |
| Numéro | Numéro de référence | Description | Fabricant | |
| 4 | SSP4N60 | (SSP4N55 / SSP4N60) N-Channel Power MOSFET |
 Samsung Electronics |
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| 3 | SSP4N60AS | Advanced Power MOFET Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A
T |
 Fairchild Semiconductor |
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| 2 | SSP4N60AS | Advanced Power MOFET |
Samsung Electronics |
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| 1 | SSP4N60B | 600V N-Channel MOSFET SSP4N60B/SSS4N60B
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, |
Fairchild Semiconductor |
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