Datasheet SS8050 PDF |
Numéro | Numéro de référence | Description | Fabricant | |
16 | SS8050 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
SS8050
DESCRIPTION ·Low Saturation Voltage-
: VCE(sat)= 0.5V(Max)@ IC =0.8A
APPLICATIONS ·Designed for high-speed switching and Amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO |
![]() INCHANGE |
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15 | SS8050 | NPN Transistor NPN General Purpose Transistors
P b Lead(Pb)-Free
SS8050
TO-92
1. EMITTER
2. BASE 3. COLLECTOR
123
MAXIMUM RATINGS(TA=25˚C unless otherwise noted)
Rating Collector-Base Voltage
Symbol VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current-Continuous
IC
Total De |
![]() Weitron Technology |
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14 | SS8050 | NPN Epitaxial Silicon Transistor SS8050 — NPN Epitaxial Silicon Transistor
November 2014
SS8050 NPN Epitaxial Silicon Transistor
Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A
1 TO-92 1. Emitter 2. Base 3. Collector
Ordering Inf |
![]() Fairchild Semiconductor |
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13 | SS8050 | Silicon Epitaxial Planar Transistor Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(IC= 1.5A) z Complementary To SS8550.
Pb
Lead-free
z Collector dissipation:PC=300mW(TC=25℃)
APPLICATIONS
z High Collector Current.
Production specification
SS8050
ORDERING INFORMATION
Type No.
Marking
SS8050
Y1
SOT-23
Pa |
![]() GME |
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12 | SS8050 | NPN Silicon Transistor Elektronische Bauelemente
SS8050
NPN Silicon General Purpose Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Complimentary to SS8550 Power Dissipation
PCM : 0.3W Collector Current
ICM : 1.5A Collector - Base Voltage
V(BR)CBO : |
![]() SeCoS |
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11 | SS8050 | NPN Transistor SS8050
TRANSISTOR (NPN)
Features • Complimentary to SS8550 • RoHS compliant package Packing & Order Information 3,000/Reel
Graphic symbol
Publication Order Number: [SS8050]
© Bruckewell Technology Corporation Rev. A -2014
SS8050
TRANSISTOR (NPN)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTI |
![]() Bruckewell |
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10 | SS8050 | NPN EPITAXIAL SILICON TRANSISTOR SS8050
NPN EPITAXIAL SILICON TRANSISTOR
2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION.
• Complimentary to SS8550
Ε Collector Current IC=1.5A
• Collector Dissipation:PC=2W (TC=25 )
ÎABSOLUTE MAXIMUM RATINGS (TA=25 )
Characteristic
Symbol
Rating
Collector-Base Vo |
![]() Samsung |
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9 | SS8050 | NPN Silicon Transistors Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
SS8050
Features
• TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction t |
![]() MCC |
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8 | SS8050-C | NPN Silicon Transistors MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 1.5A • Collecto |
![]() MCC |
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7 | SS8050-D | NPN Silicon Transistors MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.
• Collector-current 1.5A • Collecto |
![]() MCC |
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6 | SS8050-G | General Purpose Transistor General Purpose Transistor
SS8050-G (NPN)
RoHS Device
Diagram:
1 : BASE 2 : EMITTER 3 : COLLECTOR
1 Base
Collector 3
2 Emitter
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage
Collector current Collector power d |
![]() Comchip |
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5 | SS8050LT1 | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT¡ª 23
SS8050LT1
FEATURES
TRANSISTOR£¨NPN £©
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Op |
![]() Jiangsu Changjiang Electronics |
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4 | SS8050LT1 | NPN Transistor SS8050LT1
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
V CEO Value 25 40 6.0 1500
625 5.0 200
SS8050LT1=Y1
0.1 100 100
25 40 6.0
)
E=20 Vdc, I E= 0 40 5.0
O
0.1 0.1 0.1
u
u u
WEITRON
http://www.weitron.com.tw
SS8050LT1
ELECTRICAL CHARACTERISTICS (TA |
![]() Weitron Technology |
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3 | SS8050LT1 | NPN Epitaxial Silicon Transistor SS8050LT1 NPN Epitaxial Silicon Transistor
1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
SOT-23
Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC= 625mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collecto |
![]() Elite |
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Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
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