SS8050 Fiche technique

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO

NPN General Purpose Transistors P b Lead(Pb)-Free SS8050 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Collector-Base Voltage Symbol VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current-Continuous IC Total De

SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Inf

Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS z High Collector Current. Production specification SS8050 ORDERING INFORMATION Type No. Marking SS8050 Y1 SOT-23 Pa

Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Complimentary to SS8550  Power Dissipation PCM : 0.3W  Collector Current ICM : 1.5A  Collector - Base Voltage V(BR)CBO :

SS8050 TRANSISTOR (NPN) Features • Complimentary to SS8550 • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [SS8050] © Bruckewell Technology Corporation Rev. A -2014 SS8050 TRANSISTOR (NPN) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTI

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collector Current IC=1.5A • Collector Dissipation:PC=2W (TC=25 ) ÎABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Vo

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 SS8050 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction t

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collecto

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collecto

General Purpose Transistor SS8050-G (NPN) RoHS Device Diagram: 1 : BASE 2 : EMITTER 3 : COLLECTOR 1 Base Collector 3 2 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power d

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT¡ª 23 SS8050LT1 FEATURES TRANSISTOR£¨NPN £© 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Op

SS8050LT1 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 0.1 100 100 25 40 6.0 ) E=20 Vdc, I E= 0 40 5.0 O 0.1 0.1 0.1 u u u WEITRON http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA

SS8050LT1 NPN Epitaxial Silicon Transistor 1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION SOT-23 Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC= 625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collecto