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Datasheet SS8050 PDF

Numéro Numéro de référence Description Fabricant PDF
16 SS8050   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC =0.8A APPLICATIONS ·Designed for high-speed switching and Amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO
SS8050 - INCHANGE
INCHANGE
SS8050 datasheet
15 SS8050   NPN Transistor

NPN General Purpose Transistors P b Lead(Pb)-Free SS8050 TO-92 1. EMITTER 2. BASE 3. COLLECTOR 123 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Collector-Base Voltage Symbol VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current-Continuous IC Total De
SS8050 - Weitron Technology
Weitron Technology
SS8050 datasheet
14 SS8050   NPN Epitaxial Silicon Transistor

SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Inf
SS8050 - Fairchild Semiconductor
Fairchild Semiconductor
SS8050 datasheet
13 SS8050   Silicon Epitaxial Planar Transistor

Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A) z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS z High Collector Current. Production specification SS8050 ORDERING INFORMATION Type No. Marking SS8050 Y1 SOT-23 Pa
SS8050 - GME
GME
SS8050 datasheet
12 SS8050   NPN Silicon Transistor

Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Complimentary to SS8550  Power Dissipation PCM : 0.3W  Collector Current ICM : 1.5A  Collector - Base Voltage V(BR)CBO :
SS8050 - SeCoS
SeCoS
SS8050 datasheet
11 SS8050   NPN Transistor

SS8050 TRANSISTOR (NPN) Features • Complimentary to SS8550 • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [SS8050] © Bruckewell Technology Corporation Rev. A -2014 SS8050 TRANSISTOR (NPN) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTI
SS8050 - Bruckewell
Bruckewell
SS8050 datasheet
10 SS8050   NPN EPITAXIAL SILICON TRANSISTOR

SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collector Current IC=1.5A • Collector Dissipation:PC=2W (TC=25 ) ÎABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Collector-Base Vo
SS8050 - Samsung
Samsung
SS8050 datasheet
9 SS8050   NPN Silicon Transistors

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 SS8050 Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction t
SS8050 - MCC
MCC
SS8050 datasheet
8 SS8050-C   NPN Silicon Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collecto
SS8050-C - MCC
MCC
SS8050-C datasheet
7 SS8050-D   NPN Silicon Transistors

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • TO-92 Plastic-Encapsulate Transistors • Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collecto
SS8050-D - MCC
MCC
SS8050-D datasheet
6 SS8050-G   General Purpose Transistor

General Purpose Transistor SS8050-G (NPN) RoHS Device Diagram: 1 : BASE 2 : EMITTER 3 : COLLECTOR 1 Base Collector 3 2 Emitter Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector power d
SS8050-G - Comchip
Comchip
SS8050-G datasheet
5 SS8050LT1   TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT¡ª 23 SS8050LT1 FEATURES TRANSISTOR£¨NPN £© 1. BASE 2. EMITTER 3. COLLECTOR Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Op
SS8050LT1 - Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
SS8050LT1 datasheet
4 SS8050LT1   NPN Transistor

SS8050LT1 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 0.1 100 100 25 40 6.0 ) E=20 Vdc, I E= 0 40 5.0 O 0.1 0.1 0.1 u u u WEITRON http://www.weitron.com.tw SS8050LT1 ELECTRICAL CHARACTERISTICS (TA
SS8050LT1 - Weitron Technology
Weitron Technology
SS8050LT1 datasheet
3 SS8050LT1   NPN Epitaxial Silicon Transistor

SS8050LT1 NPN Epitaxial Silicon Transistor 1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION SOT-23 Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC= 625mW Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collecto
SS8050LT1 - Elite
Elite
SS8050LT1 datasheet


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