SI2305 Fiche technique

Si2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2305 is available in a lea

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2305 • • • • • • • • Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability r

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SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF. A B C D E F Millim

www.DataSheet.co.kr New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = - 4.5 V -8 0.060 at VGS = - 2.5 V 0.088 at VGS = - 1.8 V • Halogen-free Option Available • TrenchFET

MCC R Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2305B Features • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitiv

P-Channel 8 V (D-S) MOSFET Si2305CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V -8 0.048 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A)d - 5.8 - 5.0 - 4.3 Qg (Typ.) 12 nC TO-236 (SOT-23) G1 S2 3D Top View Si2305CDS (N5)* * Marking Code Ordering Informa

Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V ID (A) "3.5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Top View Si2305DS (A5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C

P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These de