S8550 Fiche technique

JIEJIE MICROELECTRONICS CO. , Ltd  S8550 Small Signal PNP Transistor Rev.1.0 FEATURE:   Complementary to S8050.  Power dissipation of 300mW.  High stability and high reliability. MECHANICAL DATA:   SOT-23 small outline plastic package  Epoxy UL: 94V-0  Mounting position: Any

S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO I

S8550 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation

UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR  DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.  FEATURES

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA） Complementary To S8050. Excellent HFE Linearity. Production specification S8550 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Typ

APD Si APD array S8550 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk betwe

Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= -500mA).  Complementary To S8050.  Excellent HFE Linearity. Pb Lead-free APPLICATIONS  High Collector Current. ORDERING INFORMATION Type No. Marking S8550 2TY Production specification S8550 SOT-23 Package

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg

S8550 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package.  特征 / Features PC,IC 大,与 S8050 互补。 High PC and IC, complementary pair with S8050.  用途 / Applications 用于乙类推挽功�

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  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operat

Elektronische Bauelemente S8550 PNP Silicon Plastic-Encapsulate Transistors FEATURES Complimentary to S8050 Collector Current: IC=0.5A MARKING: 2TY RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 1 Base 3 Collector 2 Emitter A L 3 Top View 12 VG BS C D H K MAXIMUM RA

TRANSISTOR(PNP) FEATURES z Complimentary to S8050 z Collector current: IC=0.5A MARKING : 2TY SOT-23 SS8 95051 02 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emit

S8550LT1 HIGH VOLTAGE TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=2

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S8550LT1 TRANSISTOR (PNP) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating