MTP Fiche technique
Datasheet MTP PDF |
| Numéro | Numéro de référence | Description | Fabricant | |
| 293 | MTP1013C3 | -20V P-CHANNEL MOSFET CYStech Electronics Corp.
Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2018.10.24 Page No. : 1/ 8
-20V P-CHANNEL Enhancement Mode MOSFET
MTP1013C3
BVDSS ID@ TA=25C, VGS=-4.5V RDSON@VGS=-4.5V, ID=-500mA
RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-10mA
-20V -500mA 0.63Ω(typ |
 CYStech Electronics |
 |
| 292 | MTP10N05 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs w
w
w
.D
at aS
he
et 4U .c
om
|
 Motorola |
|
| 291 | MTP10N06 | (MTP10N05 / MTP10N06) N-Channel Power MOSFETs w
w
w
.D
at aS
he
et 4U .c
om
|
Motorola |
|
| 290 | MTP10N08 | (MTP10N08 / MTP10N10) N-Channel Power MOSFETs ( DataSheet : )
|
 Fairchild Semiconductor |
|
| 289 | MTP10N08 | (MTP10N08 / MTP10N10) Power Field Effect Transistor ( DataSheet : )
|
 Motorola Semiconductor |
|
| 288 | MTP10N08 | Trans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB |
 New Jersey Semiconductor |
|
| 287 | MTP10N08L | Trans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
|
| 286 | MTP10N10 | (MTP10N08 / MTP10N10) N-Channel Power MOSFETs ( DataSheet : )
|
Fairchild Semiconductor |
|
| 285 | MTP10N10 | (MTP10N08 / MTP10N10) Power Field Effect Transistor ( DataSheet : )
|
Motorola Semiconductor |
|
| 284 | MTP10N10 | Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
|
| 283 | MTP10N10E | TMOS POWER FETs MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP10N10E/D
TMOS IV Power Field Effect Transistor
This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer d |
Motorola |
|
| 282 | MTP10N10E | Power MOSFET MTP10N10E
Preferred Device
Power MOSFET 10 Amps, 100 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers drain−to−source diodes with fast recovery times. Designed for low voltage, high s |
 ON Semiconductor |
|
| 281 | MTP10N10EL | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP10N10EL/D
™ Data Sheet Logic Level TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTP10N10EL
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand hig |
Motorola |
|
| 280 | MTP10N10EL | Power MOSFET MTP10N10EL
Preferred Device
Power MOSFET
10 A, 100 V, Logic Level, N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low vol |
ON Semiconductor |
|
Liens de partage :
|
Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
www.DataSheet.fr | 2017 | Contactez-nous | English |