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Datasheet MS1307 PDF ( Fiche technique )

Numéro Numéro de référence Description Fabricant PDF
6 MS1329   RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • 150 MHz • 28 VOLTS • POUT = 60W • GP = 7.0 dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1629 is an epitaxial silicon NPN transistor designed primarily for 12.5 V Class C, AM amplifier applications in the 118 – 136
MS1329 - Advanced Power Technology
Advanced Power Technology
MS1329 datasheet
5 MS1336   RF & MICROWAVE TRANSISTORS

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitax
MS1336 - Advanced Power Technology
Advanced Power Technology
MS1336 datasheet
4 MS1337   RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applicat
MS1337 - Advanced Power Technology
Advanced Power Technology
MS1337 datasheet
3 MS13N30   N-Channel 30-V (D-S) MOSFET

MS13N30 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, po
MS13N30 - Bruckewell
Bruckewell
MS13N30 datasheet
2 MS13N50   N-Channel MOSFET

MS13N50 500V N-Channel MOSFET Description The MS13N50 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industr
MS13N50 - Bruckewell
Bruckewell
MS13N50 datasheet
1 MS13P21   P-Channel MOSFET

MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powere
MS13P21 - Bruckewell
Bruckewell
MS13P21 datasheet


Liens de partage :
[1] 
Numéro de référence Description Fabricant PDF
2N7002DW

This electronic part is a Dual N-channel MOSFET. The feature is Voltage controlled small signal switch, High saturation current capability.

JCET
JCET
PDF
2N7002V

This electronic part is a MOSFET. The feature is Low on-resistance, Fast switching speed, Low gate threshold voltage.

JCET
JCET
PDF
AMS116

This transistor is a 100mA LOW DROPOUT VOLTAGE REGULATOR. The AMS116 series consists of positive fixed voltage regulators ideally suited for use in battery-powered systems.

Advanced Monolithic Systems
Advanced Monolithic Systems
PDF
APD360

The APD360 is a low voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required.

Diodes
Diodes
PDF
BF3216-B2R4BAA

This electronic part is a Multilayer Chip Band-Pass Filters. The feature is Ultra small SMD type with low loss at passband and high attenuation at stop-band. The application is 2.4GHz WLAN, Home RF, Bluetooth Modules, etc.

ACX
ACX
PDF

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