Datasheet MRF650 PDF ( Fiche technique ) |
| Numéro | Numéro de référence | Description | Fabricant | |
| 1 | MRF650 | RF POWER TRANSISTOR NPN SILICON MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF650/D
NPN Silicon RF Power Transistor
Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteris |
 Motorola |
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MRF6 Fiches techniques ( Datasheet ) |
| Numéro de référence | Description | Fabricant | |
| MRF6S21100NBR1 | RF Power Field Effect Transistors |
 Freescale Semiconductor |
|
| MRF6P27160HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
Freescale Semiconductor |
|
| MRF6S19100HSR3 | RF Power Field Effect Transistors |
Freescale Semiconductor |
|
| MRF6S27085HSR3 | N-Channel Enhancement-Mode Lateral MOSFETs |
Freescale Semiconductor |
|
| MRF628 | UHF AMPLIFIER TRANSISTOR |
Motorola |
|
| MRF6S21100HR3 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
Freescale Semiconductor |
|
| MRF6P23190HR6 | RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET |
Freescale Semiconductor |
|
| MRF6S19060NR1 | RF Power Field Effect Transistors |
Freescale Semiconductor |
|
Liens de partage :
Fiche de données de référence
| Numéro de référence | Description | Fabricant | |
| 2N7002DW | This electronic part is a Dual N-channel MOSFET. The feature is Voltage controlled small signal switch, High saturation current capability. |
 JCET |
|
| 2N7002V | This electronic part is a MOSFET. The feature is Low on-resistance, Fast switching speed, Low gate threshold voltage. |
JCET |
|
| AMS116 | This transistor is a 100mA LOW DROPOUT VOLTAGE REGULATOR. The AMS116 series consists of positive fixed voltage regulators ideally suited for use in battery-powered systems. |
 Advanced Monolithic Systems |
|
| APD360 | The APD360 is a low voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required. |
 Diodes |
|
| BF3216-B2R4BAA | This electronic part is a Multilayer Chip Band-Pass Filters. The feature is Ultra small SMD type with low loss at passband and high attenuation at stop-band. The application is 2.4GHz WLAN, Home RF, Bluetooth Modules, etc. |
 ACX |
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