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Datasheet MJ3055 PDF ( Fiche technique )

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2 MJ3055   Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ3055 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching an
MJ3055 - Inchange Semiconductor
Inchange Semiconductor
MJ3055 datasheet
1 MJ3055   Bipolar NPN Device

MJ3055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.1
MJ3055 - Seme LAB
Seme LAB
MJ3055 datasheet

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This transistor is a 100mA LOW DROPOUT VOLTAGE REGULATOR. The AMS116 series consists of positive fixed voltage regulators ideally suited for use in battery-powered systems.

Advanced Monolithic Systems
Advanced Monolithic Systems

The APD360 is a low voltage dual Schottky rectifier suited for switch mode power supplies and other power converters. This device is intended for use in medium voltage operation, and particularly, in high frequency circuits where low switching losses and low noise are required.

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