ME4856 Fiche technique
Datasheet ME4856 PDF |
| Numéro | Numéro de référence | Description | Fabricant | |
| 2 | ME4856 | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particul |
 Matsuki |
 |
| 1 | ME4856-G | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particul |
Matsuki |
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