ME4542 Fiche technique
Datasheet ME4542 PDF |
| Numéro | Numéro de référence | Description | Fabricant | |
| 3 | ME4542 | N- and P-Channel 30-V (D-S) MOSFET
ME4542
N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542 is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on- |
 Matsuki |
 |
| 2 | ME4542D | N- & P-Channel MOSFET N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devi |
Matsuki |
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| 1 | ME4542D-G | N- & P-Channel MOSFET N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542D is the N- and P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devi |
Matsuki |
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