Datasheet KTB PDF |
Numéro | Numéro de référence | Description | Fabricant | |
46 | KTB1124 | PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor
FEATURES
Pb
Adoption of MBIT processes.
Lead-free
Low collector-to-emitter saturation voltage.
Fast switching speed.
Complementary: KTD1624.
Production specification
KTB1124
ORDERING INFORMATION
Type No.
Marking
KTB1124
XA/XB/XC
S |
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45 | KTB1124 | Silicon PNP transistor KTB1124
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.
特征 / Features
选用 MBIT 工艺规程,集电极-发射集饱和压降低,开关速度快,小电流电容和宽阔的安全工作区 |
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44 | KTB1124 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624.
KTB1124
EPITAXIAL PLANAR PNP TRANS |
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43 | KTB1151 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC |
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42 | KTB1234T | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting sets to be made smaller and slimer. ᴌComplementary to KTD1854T.
C L
KTB1234T
EPI |
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41 | KTB1241 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE ᴌHigh Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Col |
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40 | KTB1260 | EPITAXIAL PLANAR PNP TRANSISTOR J B
EQ
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTD1898.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitte |
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39 | KTB1366 | Silicon PNP transistor KTB1366
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.
特征 / Features
饱和压降低,与 KTD2058 互补。 Low saturation voltage, complementary to KTD2058.
用途 / Applications
用于 |
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38 | KTB1366 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate Transistors
KTB1366 TRANSISTOR (PNP)
FEATURES z Low Collector Saturation Voltage z Complementary to KTD2058
TO-220-3L
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCE |
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37 | KTB1366 | Silicon PNP Power Transistors isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min) ·Collector Power Dissipation-
: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTD2058 ·Minimum Lot-to-Lot variation |
![]() Inchange Semiconductor |
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36 | KTB1366 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTB1366
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Collector Power Dissipation : PC=25W (Tc=25 ) Complementary to KTD2058.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
S |
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35 | KTB1367 | Silicon PNP Power Transistors isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Collector Power Dissipation-
: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type KTD2059 ·Minimum Lot-to-Lot variation |
![]() Inchange Semiconductor |
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34 | KTB1367 | TRIPLE DIFFUSED PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTB1367
TRIPLE DIFFUSED PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTD2059.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base |
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33 | KTB1368 | PNP Epitaxial Planar Silicon Transistors PNP Epitaxial Planar Silicon Transistors
FEATURES
z Good Linearity of hfe. z Complementary to KTD2060
Pb
Lead-free
Production specification
KTB1368
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage |
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Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
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