KTB Fiche technique

PNP Silicon Epitaxial Planar Transistor FEATURES Pb  Adoption of MBIT processes. Lead-free  Low collector-to-emitter saturation voltage.  Fast switching speed.  Complementary: KTD1624. Production specification KTB1124 ORDERING INFORMATION Type No. Marking KTB1124 XA/XB/XC S

KTB1124 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.  特征 / Features 选用 MBIT 工艺规程，集电极-发射集饱和压降低,开关速度快，小电流电容和宽阔的安全工作区

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. KTB1124 EPITAXIAL PLANAR PNP TRANS

SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC

SEMICONDUCTOR TECHNICAL DATA DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting sets to be made smaller and slimer. ᴌComplementary to KTD1854T. C L KTB1234T EPI

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Col

J B EQ SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES 1W (Mounted on Ceramic Substrate). Small Flat Package. Complementary to KTD1898. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitte

KTB1366 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.  特征 / Features 饱和压降低，与 KTD2058 互补。 Low saturation voltage, complementary to KTD2058. 用途 / Applications 用于

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors KTB1366 TRANSISTOR (PNP) FEATURES z Low Collector Saturation Voltage z Complementary to KTD2058 TO-220-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCE

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTD2058 ·Minimum Lot-to-Lot variation

SEMICONDUCTOR TECHNICAL DATA KTB1366 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. Collector Power Dissipation : PC=25W (Tc=25 ) Complementary to KTD2058. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC S

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type KTD2059 ·Minimum Lot-to-Lot variation

SEMICONDUCTOR TECHNICAL DATA KTB1367 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTD2059. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base

PNP Epitaxial Planar Silicon Transistors FEATURES z Good Linearity of hfe. z Complementary to KTD2060 Pb Lead-free Production specification KTB1368 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage