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K40T120 Fiche technique

Datasheet K40T120 PDF

Numéro Numéro de référence Description Fabricant PDF
2 K40T120   IGBT

FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve d
K40T120 - Infineon
Infineon
K40T120 datasheet
1 K40T1202   IGBT

TrenchStop 2 Generation Series ® nd IKW40N120T2 Low Loss DuoPack :            IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time – 10s Designed for : - Fre
K40T1202 - Infineon
Infineon
K40T1202 datasheet


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