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Datasheet IRFZ44N PDF

Numéro Numéro de référence Description Fabricant PDF
10 IRFZ44N   Power MOSFET

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr
IRFZ44N - International Rectifier
International Rectifier
IRFZ44N datasheet
9 IRFZ44N   N-Channel MOSFET

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state
IRFZ44N - NXP
NXP
IRFZ44N datasheet
8 IRFZ44N   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Voltage- : VDSS= 55V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.032Ω(Max) ·Fast Switching DESCRIPTION ·Designed for low voltage, high
IRFZ44N - INCHANGE
INCHANGE
IRFZ44N datasheet
7 IRFZ44NL   Power MOSFET

PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXFET® Power MOSFETs f
IRFZ44NL - International Rectifier
International Rectifier
IRFZ44NL datasheet
6 IRFZ44NLPBF   Power MOSFET

l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev
IRFZ44NLPBF - International Rectifier
International Rectifier
IRFZ44NLPBF datasheet
5 IRFZ44NPBF   Power MOSFET

PD - 94787 IRFZ44NPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-
IRFZ44NPBF - International Rectifier
International Rectifier
IRFZ44NPBF datasheet
4 IRFZ44NS   N-Channel MOSFET

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state res
IRFZ44NS - NXP
NXP
IRFZ44NS datasheet
3 IRFZ44NS   Power MOSFET

PD - 94153 Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRFZ44NS IRFZ44NL HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175Ω Advanced HEXFET® Power MOSFETs f
IRFZ44NS - International Rectifier
International Rectifier
IRFZ44NS datasheet
2 IRFZ44NS   N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Powe
IRFZ44NS - INCHANGE
INCHANGE
IRFZ44NS datasheet
1 IRFZ44NSPBF   Power MOSFET

l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev
IRFZ44NSPBF - International Rectifier
International Rectifier
IRFZ44NSPBF datasheet


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