Datasheet FJV PDF |
Numéro | Numéro de référence | Description | Fabricant | |
36 | FJV1845 | NPN Epitaxial Silicon Transistor FJV1845
FJV1845
Amplifier Transistor
• Complement to FJV992
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage |
![]() Fairchild Semiconductor |
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35 | FJV3101 | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN E |
![]() Fairchild Semiconductor |
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34 | FJV3101R | NPN Epitaxial Silicon Transistor FJV3101R
FJV3101R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJV4101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R21
NPN E |
![]() Fairchild Semiconductor |
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33 | FJV3102 | NPN Epitaxial Silicon Transistor FJV3102R
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R22
R1 B R2 |
![]() Fairchild Semiconductor |
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32 | FJV3102R | NPN Epitaxial Silicon Transistor FJV3102R
FJV3102R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJV4102R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R22
R1 B R2 |
![]() Fairchild Semiconductor |
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31 | FJV3103R | NPN Epitaxial Silicon Transistor FJV3103R
FJV3103R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to FJV4103R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R23
NPN Epit |
![]() Fairchild Semiconductor |
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30 | FJV3104R | NPN Epitaxial Silicon Transistor FJV3104R
FJV3104R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47KΩ, R2=47KΩ) • Complement to FJV4104R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R24
R1 B R2 |
![]() Fairchild Semiconductor |
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29 | FJV3105R | NPN Epitaxial Silicon Transistor FJV3105R
FJV3105R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=10KΩ) • Complement to FJV4105R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Marking
Equivalent Circuit C
R25
NPN E |
![]() Fairchild Semiconductor |
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28 | FJV3106R | NPN Epitaxial Silicon Transistor FJV3106R
FJV3106R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=47KΩ) • Complement to FJV4106R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R26
NPN Epit |
![]() Fairchild Semiconductor |
![]() |
27 | FJV3107R | NPN Epitaxial Silicon Transistor FJV3107R
FJV3107R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=47KΩ) • Complement to FJV4107R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R2 7
NPN Epi |
![]() Fairchild Semiconductor |
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26 | FJV3108R | NPN Epitaxial Silicon Transistor FJV3108R
FJV3108R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to FJV4108R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R28
NPN Epit |
![]() Fairchild Semiconductor |
![]() |
25 | FJV3109R | NPN Epitaxial Silicon Transistor FJV3109R
FJV3109R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJV4109R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R29
B
R
NPN Epitaxial |
![]() Fairchild Semiconductor |
![]() |
24 | FJV3110R | NPN Epitaxial Silicon Transistor FJV3110R
FJV3110R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to FJV4110R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R30
B
R
NPN Epitaxial |
![]() Fairchild Semiconductor |
![]() |
23 | FJV3111 | NPN Epitaxial Silicon Transistor FJV3111R
FJV3111R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJV4111R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector Marking
Equivalent Circuit C
R31
B
R
NPN Epitaxial |
![]() Fairchild Semiconductor |
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Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
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