Datasheet FDH PDF |
Numéro | Numéro de référence | Description | Fabricant | |
37 | FDH038AN08A1 | N-Channel MOSFET FDH038AN08A1
February 2003
FDH038AN08A1
N-Channel PowerTrench® MOSFET 75V, 80A, 3.8mΩ
Features
• r DS(ON) = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 125nC (Typ.), VGS = 10V • Internal Gate Resistor, Rg = 20Ω (Typ.) • Low Miller Charge • Low QRR Body Diode • UIS Capability |
![]() Fairchild Semiconductor |
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36 | FDH047AN08A0 | N-Channel MOSFET FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench® MOSFET 75V, 80A, 4.7mΩ
Features
• rDS(ON) = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 92nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capa |
![]() Fairchild Semiconductor |
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35 | FDH055N15A | MOSFET FDH055N15A — N-Channel PowerTrench® MOSFET
March 2015
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
|
![]() Fairchild Semiconductor |
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34 | FDH055N15A | N-Channel MOSFET FDH055N15A — N-Channel PowerTrench® MOSFET
FDH055N15A
N-Channel PowerTrench® MOSFET
150 V, 167 A, 5.9 mΩ
Features
• RDS(on) = 4.8 mΩ (Typ.) @ VGS = 10 V, ID = 120 A • Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power |
![]() ON Semiconductor |
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33 | FDH1000 | Silicon Diode Fairchild
Diode FDH1000
Datasheet
Silicon – Diode FDH1000
50V/200mA
DATASHEET
OEM – Fairchild
Source: Fairchild Databook 1978
Datasheet Rev. 1.3 – 03/19 - data without warranty / liability
Fairchild
Diode FDH1000
Datasheet
Datasheet Rev. 1.3 – 03/19 - data without warranty / liabil |
![]() Fairchild Semiconductor |
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32 | FDH1040 | Fixed Inductors Fixed Inductors for Surface Mounting
FDH1040/FDH1040B
Inductance Range: 0.36~0.56µH
DIMENSIONS
FDH1040
11.2 4.0 Max. 2.55 (6.0) 2.55
FDH1040B
11.3 4.0 Max. 2.35 (6.6) 2.35
10.2
10.2
7.5
4.0
Tolerance : ±0.3 (Unit: mm)
Recommended patterns
FDH1040 FDH1040B
8.1
4.1
5.4
4.1 (Unit: mm)
3 |
![]() TOKO |
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31 | FDH1040B | Fixed Inductors Fixed Inductors for Surface Mounting
FDH1040/FDH1040B
Inductance Range: 0.36~0.56µH
DIMENSIONS
FDH1040
11.2 4.0 Max. 2.55 (6.0) 2.55
FDH1040B
11.3 4.0 Max. 2.35 (6.6) 2.35
10.2
10.2
7.5
4.0
Tolerance : ±0.3 (Unit: mm)
Recommended patterns
FDH1040 FDH1040B
8.1
4.1
5.4
4.1 (Unit: mm)
3 |
![]() TOKO |
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30 | FDH15N50 | 15A/ 500V/ 0.38 Ohm/ N-Channel SMPS Power MOSFET FDH15N50 / FDP15N50 / FDB15N50
August 2003
FDH15N50 / FDP15N50 / FDB15N50
15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Conver |
![]() Fairchild Semiconductor |
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29 | FDH20N40 | 20A/ 400V/ 0.216 Ohm/ N-Channel SMPS Power MOSFET FDH20N40 / FDP20N40
October 2002
FDH20N40 / FDP20N40
20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed S |
![]() Fairchild Semiconductor |
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28 | FDH210N08 | N-Channel UniFET MOSFET FDH210N08 — N-Channel UniFETTM MOSFET
FDH210N08
N-Channel UniFETTM MOSFET
75 V, 210 A, 5.5 mΩ Features
• RDS(on) = 4.65 mΩ (Typ.) @ VGS = 10 V, ID = 125 A • Low Gate Charge (Typ. 232 nC) • Low Crss (Typ. 262 pF) • 100% Avalanche Tested • Improved dv/dt Capability
Applications
• Sync |
![]() Fairchild Semiconductor |
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27 | FDH27N50 | 27A/ 500V/ 0.19 Ohm/ N-Channel SMPS Power MOSFET FDH27N50
August 2002
FDH27N50
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET
Applications
Switch Mode Power Supplies(SMPS), such as • PFC Boost • Two-Switch Forward Converter • Single Switch Forward Converter • Flyback Converter • Buck Converter • High Speed Switching
Features
• L |
![]() Fairchild Semiconductor |
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26 | FDH300 | Diode FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 — High Conductance Low Leakage Diode
March 2015
FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 High Conductance Low Leakage Diode
Cathode Band
DO-35
Cathode is denoted with a black band
LL-34 (SOD-80)
THE PLACEMENT OF THE EXPANSION GAP HAS NO REL |
![]() Fairchild Semiconductor |
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25 | FDH300A | Diode FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 — High Conductance Low Leakage Diode
March 2015
FDH300 / FDH300A / FDLL300A / FDH333 / FDLL333 High Conductance Low Leakage Diode
Cathode Band
DO-35
Cathode is denoted with a black band
LL-34 (SOD-80)
THE PLACEMENT OF THE EXPANSION GAP HAS NO REL |
![]() Fairchild Semiconductor |
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24 | FDH3011 | Diode 150V 0.2A 2-Pin DO-35 T/R |
![]() New Jersey Semiconductor |
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