Datasheet A733 PDF |
Numéro | Numéro de référence | Description | Fabricant | |
6 | A733 | PNP TRANSISTOR
PNP TRANSISTOR -100mA
A733
AF OUTPUT AMPLIFIER
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡]
Ta=25¢J¡^
PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base |
![]() Stanson Technology |
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5 | A733 | PNP Epitaxial Silicon Transistor A733 PNP Epitaxial Silicon Transistor
LOW FREQUENCY AMPLIFIER
Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW
Absolute Maximum Ratings (TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ju |
![]() Elite |
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4 | A733 | PNP Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors
A733 TRANSISTOR(PNP )
TO-92
FEATURE Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage Emitter |
![]() Tuofeng Semiconductor |
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3 | A733 | PNP Transistor Elektronische Bauelemente
A733
-0.1A , -60V PNP Plastic-Encapsulated Transistor
FEATURES
Power Dissipation
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
G
TO-92
H
CLASSIFICATION OF hFE
Product-Rank A733-R
Range
90~180
A733-Q 135~270
A733-P 200~400
A733-K 300~600 |
![]() SeCoS |
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2 | A7336 | 600mA STEP-DOWN DC-DC + DUAL 300mA CMOS LDO AiT Semiconductor Inc.
www.ait-ic.com
A7336
600mA STEP-DOWN DC-DC + DUAL 300mA CMOS LDO POWER MANAGEMENT UNIT (PMU)
DESCRIPTION
The A7336 is a complex power management, which can provide two roads of low-noise high-speed LDOs and high efficiency reached 95% of the DC-DC buck. As the use of CMOS |
![]() AiT Semiconductor |
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1 | A733LT1 | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
A733LT1
FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡ |
![]() Jiangsu Changjiang Electronics |
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