A733 Fiche technique

PNP TRANSISTOR -100mA A733 AF OUTPUT AMPLIFIER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] Ta=25¢J¡^ PARAMETERS SYMBOL MIN TYP MAX UNIT CONDITION Collector-Emitter Breakdown Voltage BVceo -50 V Ic=1mA Collector-Base Breakdown Voltage BVcbo -60 V Ic=5uA Emitter-Base

A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Ju

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors A733 TRANSISTOR(PNP ) TO-92 FEATURE Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter

Elektronische Bauelemente A733 -0.1A , -60V PNP Plastic-Encapsulated Transistor FEATURES Power Dissipation RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free G TO-92 H CLASSIFICATION OF hFE Product-Rank A733-R Range 90~180 A733-Q 135~270 A733-P 200~400 A733-K 300~600

AiT Semiconductor Inc.   www.ait-ic.com A7336 600mA STEP-DOWN DC-DC + DUAL 300mA CMOS LDO POWER MANAGEMENT UNIT (PMU) DESCRIPTION The A7336 is a complex power management, which can provide two roads of low-noise high-speed LDOs and high efficiency reached 95% of the DC-DC buck. As the use of CMOS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors A733LT1 FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range T J £¬ T stg: -55¡