Datasheet A1015 PDF |
Numéro | Numéro de référence | Description | Fabricant | |
8 | A1015 | Photo Interrupters Transmissive Photosensors (Photo Interrupters)
CNA1015
Photo Interrupters
Overview
(2.5)
Unit : mm
14.0 5.0±0.15 A 0.5±0.1 Device center
5.0 (C1)
10.0 min. 2.5
CNA1015 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the lig |
![]() Panasonic Semiconductor |
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7 | A1015 | PNP general purpose transistor DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2PA1015 PNP general purpose transistor
Product specification Supersedes data of 1997 May 01 1999 Apr 08
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES • Low current (max. 150 mA) • Low voltage |
![]() NXP |
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6 | A1015 | Silicon PNP Transistor 2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications Low Noise Amplifier Applications
• High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max)
• Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, |
![]() Toshiba Semiconductor |
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5 | A1015 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SA1015
PNP EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY PNP AMPLIFIER TRANSISTOR
FEATURES
*Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815
1
TO-92
1:EMITTER 2:COLLECTOR 3: BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherw |
![]() Unisonic Technologies |
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4 | A1015 | LOW FREQUENCY AMPLIFIER KSA1015
KSA1015
LOW FREQUENCY AMPLIFIER
• Collector-Base Voltage : VCBO= -50V • Complement to KSC1815
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TST9 Parameter Collector- |
![]() Fairchild Semiconductor |
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3 | A1015 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
A1015
TRANSISTOR (PNP)
TO—92
1.EMITTER
FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Collector-Base Voltage Collector-Emitter Vo |
![]() Jiangsu Changjiang |
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2 | A1015 | PNP Transistor Elektronische Bauelemente
A1015
-0.15A , -50V PNP Plastic-Encapsulated Transistor
FEATURES
Power Dissipation
CLASSIFICATION OF hFE
Product-Rank A1015-O
Range
70~140
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
TO-92
GH
A1015-Y 120~240
A1015-GR 200~400
J AD
B K |
![]() SeCoS |
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1 | A1015L | Silicon PNP Transistor 2SA1015(L)
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1015(L)
Audio Frequency Amplifier Applications Low Noise Amplifier Applications
• High voltage and high current: VCEO = −50 V (min), IC = −150 mA (max)
• Excellent hFE linearity: hFE (2) = 80 (typ.) at VCE = −6 V, |
![]() Toshiba Semiconductor |
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Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
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