60N60 Fiche technique

Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM I C25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MW Continuous Transient T C = 25°C TC = 90°C T C

Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Tran

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduct

Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technology, offer the optimum performance for induction Heating,UPS,SMPS and PFC application. FEATURES  60A, 600V,VCE(sat)(typ.)=2.2V@IC=60A  Low conduct