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Datasheet 60N60 PDF

Numéro Numéro de référence Description Fabricant PDF
3 60N60   IGBT

Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM I C25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MW Continuous Transient T C = 25°C TC = 90°C T C
60N60 - IXYS Corporation
IXYS Corporation
60N60 datasheet
2 60N60C2   IGBT

Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 60N60C2 IXGT 60N60C2 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 2.5 V = 35 ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Tran
60N60C2 - IXYS
IXYS
60N60C2 datasheet
1 60N60FD1   IGBT

士兰微电子 SGT60N60FD1PN/P7 说明书 60A、600V绝缘栅双极型晶体管 描述 SGT60N60FD1PN/P7 绝缘栅双极型晶体管采用场截止(Field Stop) 工艺制作,具有较低的导通损耗和开关损耗,该产品可应用于 UPS,SMPS 以及 PFC 等领域。 特点  60A,60
60N60FD1 - Silan Microelectronics
Silan Microelectronics
60N60FD1 datasheet


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