DataSheet.fr Fiche technique

20N60 Fiche technique

Datasheet 20N60 PDF

Numéro Numéro de référence Description Fabricant PDF
18 20N60   20A 600V N-channel Enhancement Mode Power MOSFET

20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220
20N60 - ROUM
ROUM
20N60 datasheet
17 20N60   IGBT

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions Maximum Ratings VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous
20N60 - IXYS
IXYS
20N60 datasheet
16 20N60   600V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N60 20A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta
20N60 - UTC
UTC
20N60 datasheet
15 20N60A   IGBT

Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions Maximum Ratings VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous
20N60A - IXYS
IXYS
20N60A datasheet
14 20N60A   N-channel MOSFET

Description JMP N-channel MOSFET Features  600V,20A  RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A  Fast Switching  Improved dv/dt Capability  100% Avalanche Tested JMP(S.Z.F)20N60A Application  Switch Mode Power Supply(SMPS)  Uninterruptible Power Supply(UPS)  Power Factor C
20N60A - JieJie
JieJie
20N60A datasheet
13 20N60A4D   HGTG20N60A4D

HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
20N60A4D - Fairchild Semiconductor
Fairchild Semiconductor
20N60A4D datasheet
12 20N60A4D   N-Channel IGBT

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss o
20N60A4D - ON Semiconductor
ON Semiconductor
20N60A4D datasheet
11 20N60B   IGBT

HiPerFASTTM IGBT IXGA 20N60B IXGP 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (T
20N60B - IXYS Corporation
IXYS Corporation
20N60B datasheet
10 20N60BD1   IGBT

HiPerFASTTM IGBT with Diode IXGH 20N60BD1 IXGT 20N60BD1 VCES IC25 VCE(sat)typ tfi(typ) = = = = 600 40 1.7 100 V A V ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Tra
20N60BD1 - IXYS Corporation
IXYS Corporation
20N60BD1 datasheet
9 20N60C2   Power Transistor

Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 V
20N60C2 - Infineon Technologies
Infineon Technologies
20N60C2 datasheet
8 20N60C3   N-Channel IGBT

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 File Number 4492.2 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and
20N60C3 - Intersil Corporation
Intersil Corporation
20N60C3 datasheet
7 20N60C3   Power Transistor

6331& 63,1&63$1& &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDUKLJKYROWDJHWHFKQRORJ •:RUOGZLGHEHVW5'6 RQ LQ72 •8OWUDORZJDWHFKDUJH 3G72FP VDS#Tjmax 5'6 RQ ,' 3G722 • 3HULRGLFDYDODQFKHUDWHG •([WUHPHGYGWUDWHG • +LJKSHDNFXUUHQW
20N60C3 - Infineon
Infineon
20N60C3 datasheet
6 20N60C5   Power MOSFET

IXKH 20N60C5 IXKP 20N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 20 A VDSS = 600 V R =DS(on) max 0.2 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions
20N60C5 - IXYS
IXYS
20N60C5 datasheet
5 20N60CFD   Cool MOS Power Transistor

0MMJ!57;W 8MTCO!jfdX`X!W<*W; dTfXW )%AZ[!cXT^!VgddXaf!VTcTU_fk )%BafdaeV!YTef(dXVbhXdk!UbWk!WbWX )!>jfdX`X!_bi!dXhXdeX!dXVbhXdk!V[TdZX ;88'%6+%031 0=L!&
20N60CFD - Infineon
Infineon
20N60CFD datasheet


Liens de partage :
[1] [2] 

Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.fr    |  2017    |  Contactez-nous    |   English