Datasheet 20N60 PDF |
Numéro | Numéro de référence | Description | Fabricant | |
18 | 20N60 | 20A 600V N-channel Enhancement Mode Power MOSFET 20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220 |
![]() ROUM |
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17 | 20N60 | IGBT Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA (RBSOA)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GE
=
1
MΩ
Continuous
|
![]() IXYS |
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16 | 20N60 | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 20N60
20A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-sta |
![]() UTC |
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15 | 20N60A | IGBT Low VCE(sat) IGBT High speed IGBT
IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A
VCES 600 V 600 V
IC25 40 A 40 A
VCE(sat) 2.5 V 3.0 V
Symbol
Test Conditions
Maximum Ratings
VCES V
CGR
VGES V
GEM
IC25 IC90 I
CM
SSOA (RBSOA)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GE
=
1
MΩ
Continuous
|
![]() IXYS |
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14 | 20N60A | N-channel MOSFET Description
JMP N-channel MOSFET
Features
600V,20A RDS(ON) = 0.3Ω (Typ.) @ VGS = 10V, ID =10A Fast Switching Improved dv/dt Capability 100% Avalanche Tested
JMP(S.Z.F)20N60A
Application
Switch Mode Power Supply(SMPS) Uninterruptible Power Supply(UPS) Power Factor C |
![]() JieJie |
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13 | 20N60A4D | HGTG20N60A4D HGTG20N60A4D
Data Sheet February 2009
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on |
![]() Fairchild Semiconductor |
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12 | 20N60A4D | N-Channel IGBT SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V
HGTG20N60A4D
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss o |
![]() ON Semiconductor |
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11 | 20N60B | IGBT HiPerFASTTM IGBT
IXGA 20N60B IXGP 20N60B
VCES IC25 VCE(sat)typ tfi
= 600 V = 40 A = 1.7 V = 100 ns
Preliminary data sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (T |
![]() IXYS Corporation |
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10 | 20N60BD1 | IGBT HiPerFASTTM IGBT with Diode
IXGH 20N60BD1 IXGT 20N60BD1
VCES IC25 VCE(sat)typ tfi(typ)
= = = =
600 40 1.7 100
V A V ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Tra |
![]() IXYS Corporation |
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9 | 20N60C2 | Power Transistor Final data
SPP20N60C2, SPB20N60C2 SPA20N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge
• Periodic
Product Summary VDS @ Tjmax 650 R DS(on) ID
P-TO220-3-31 P-TO263-3-2
V |
![]() Infineon Technologies |
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8 | 20N60C3 | N-Channel IGBT HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S
Data Sheet January 2000 File Number 4492.2
45A, 600V, UFS Series N-Channel IGBT
This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and |
![]() Intersil Corporation |
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7 | 20N60C3 | Power Transistor 6331& 63,1&63$1&
&RRO026 3RZHU7UDQVLVWRU
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3G72FP
VDS#Tjmax 5'6RQ,'
3G722
• 3HULRGLFDYDODQFKHUDWHG
•([WUHPHGYGWUDWHG • +LJKSHDNFXUUHQW |
![]() Infineon |
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6 | 20N60C5 | Power MOSFET IXKH 20N60C5 IXKP 20N60C5
CoolMOS™ 1) Power MOSFET
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
ID25 = 20 A
VDSS
= 600 V
R =DS(on) max 0.2 Ω
D TO-247 AD (IXKH)
G S
G D S
TO-220 AB (IXKP)
q D(TAB)
MOSFET
Symbol
VDSS VGS
ID25 ID90 EAS EAR dV/dt
Conditions |
![]() IXYS |
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5 | 20N60CFD | Cool MOS Power Transistor 0MMJ!57;W 8MTCO! |
![]() Infineon |
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Index : 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z |
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