Fiche technique

20N06 Fiche technique

Datasheet 20N06 PDF

Numéro Numéro de référence Description Fabricant PDF
2 20N06   N-Channel MOSFET

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliabl
20N06 - Inchange Semiconductor
Inchange Semiconductor
20N06 datasheet
1 20N06   N-Channel MOSFET

NTD20N06, NTDV20N06 MOSFET – Power, N-Channel, DPAK 20 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower Capacitances • Lower Total Gate Charge
20N06 - ON Semiconductor
ON Semiconductor
20N06 datasheet

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