1N4148 Fiche technique

1N91x, 1N4x48, FDLL914, FDLL4x48 Small Signal Diode ORDERING INFORMATION Part Number Marking Package 1N914 914 DO−204AH (DO−35) 1N914−T50A 914 DO−204AH (DO−35) 1N914TR 914 DO−204AH (DO−35) 1N914ATR 914A DO−204AH (DO−35) 1N914B 914B DO−204AH (DO−35) 1N914BTR 914B

Features • Fast Switching Speed • General Purpose Rectification • Silicon Epitaxial Planar Construction • Lead Free Finish, RoHS Compliant (Note 2) 1N4148 / 1N4448 FAST SWITCHING DIODE Mechanical Data • Case: DO-35 • Case Material: Glass • Moisture Sensitivity: Level 1 per J-STD-020D

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 — Small Signal Diode June 2015 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Small Signal Diode Cathode Band DO-35 Cathode is denoted with a black band SOD80 LL-34 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

www.vishay.com 1N4148 Vishay Semiconductors Small Signal Fast Switching Diodes DESIGN SUPPORT TOOLS click logo to get started FEATURES • Silicon epitaxial planar diode • Electrically equivalent diodes: 1N4148 - 1N914 • Material categorization: for definitions of compliance please see www.v

UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE  DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount pa

1N4148 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator Features • Low capacitance. (C = 4.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • High reliability with glass seal. REJ03G0556-0500 Rev.5.00 Jul 19, 2006 Ordering Information Type No. 1N4148 C

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product data sheet Supersedes data of 2002 Jan 23 2004 Aug 10 NXP Semiconductors High-speed diodes Product data sheet 1N4148; 1N4448 FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching

1N4148 / 1N4448 / 1N914B Taiwan Semiconductor 500mW, High Speed Switching Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free accordin

1N914 & 1N4148-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +200°C Operating Current: 200 mA @ TA = +25°C D

1N4148-1 Available on commercial versions Glass Axial Switching Diode Qualified per MIL-PRF-19500/116 DESCRIPTION This popular 1N4148-1 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low ca

Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 1 µs Max. Power Dissipation (PT) at TA = 25 °C Max. Thermal Resistance (Rth J-A) Max. Junction Tempe

www.vishay.com 1N4148-P Vishay Semiconductors Small Signal Fast Switching Diodes DESIGN SUPPORT TOOLS click logo to get started FEATURES • Silicon epitaxial planar diode • Automotive graded device • AEC-Q101 qualified • Material categorization: for definitions of compliance please see ww

1N4148CSM MECHANICAL DATA Dimensions in mm (inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 2.54 ± 0.13 (0.10 ± 0.005) 3 SILICON EPITAXIAL PLANAR DIODE 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) A 1.40 (0.055) ma