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Numéro de référence CMS2005
Description MagnetoResistive Current Sensor
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CMS2005 Datasheet, Description
CMS2005
MagnetoResistive Current Sensor (IPN = 5 A)
The CMS2000 current sensor family is designed for highly dynamic electronic
measurement of DC, AC, pulsed and mixed currents with integrated galvanic
isolation. The MagnetoResistive technology enables an excellent dynamic re-
sponse without the hysteresis that is present in iron core based designs.
The CMS2000 product family offers PCB-mountable THT current sensors
from 5 A up to 100 A nominal current for industrial applications.
Product Overview
article description
CMS2005-SP3
CMS2005-SP10
Package
THT
THT
Delivery type
Tray
Tray
Quick Reference Guide
Symbol Parameter
Min.
typ.
VCC Supply voltage
±12.0 ±15.0
IPN
Primary nominal current
(RMS)
-
-
IPR
Primary measuring range 1)
-20
-
fco
Frequency bandwidth
(-3 dB)
200 -
εΣ, SP3
Accuracy for SP3 2)
--
εΣ, SP10
Accuracy for SP10 2)
--
1) For 3 s in a 60 s interval (RMS ≤ IPN) and VCC = ±15 V.
2) εΣ = εG & εlin with VCC = ±15 V, IP = IPN, Tamb = 25 °C.
Max.
-
5.0
+20
-
±0.8
±0.5
Qualification Overview
Standard
Name
Status
2002/95/EC
EN 61800-5-1: 2007
DIN EN 50178
UL508 (E251279)
RoHS-conformity
Adjustable speed electrical
power drive systems
Electronic equipment for
use in power installations
Industrial control equipment
Approved
Approved
Approved
Approved
Unit
V
A
A
kHz
% of IPN
% of IPN
Features
– Based on the AnisotropicMagnetoResistive
(AMR) effect
– Measuring range up to 4 times nominal
current
– Galvanic isolation between primary and
measurement circuit
– Bipolar 15 V power supply
advantages
– High signal-to-noise ratio
– Highly dynamic step response
– Negligible hysteresis
– Excellent accuracy
– Low temperature drift
applications
– Solar power converters
– Measurement devices
– AC variable speed drives
– Converters for DC motor drives
– Uninterruptible power supplies
– Switched mode power supplies
– Power supplies for welding applications
CMS2005.DSE.03
Data sheet
Page 1 of 13
Subject to technical changes
June 8th 2015
CMS2005 Fiche technique
CMS2005
MagnetoResistive Current Sensor (IPN = 5 A)
Electrical Data of SP3 and SP10
Tamb = 25 °C; VCC = ±15 V; unless otherwise specified.
Symbol Parameter
Conditions
V+ Positive supply voltage
V- Negative supply voltage
IPN Primary nominal current (RMS)
IPR Measuring range 1)
VoutN Nominal output voltage (RMS)
RM Internal burden resistor for output signal
RP Resistance of primary conductor
IQ Quiescent current
ICN Nominal current consumption
ICR Measuring range current consumption
ICM Maximal current consumption 2)
IP = IPN, comp. Fig.1
IP = 0
IP = IPN
IP = IPR
IP > IPR
Tamb = 25 °C; VCC = ±12 V; unless otherwise specified.
Symbol Parameter
Conditions
V+ Positive supply voltage
V- Negative supply voltage
IPN Primary nominal current (RMS)
IPR Measuring range 1)
VoutN Nominal output voltage (RMS)
RM Internal burden resistor for output signal
RP Resistance of primary conductor
IQ Quiescent current
ICN Nominal current consumption
ICR Measuring range current consumption
ICM Maximal current consumption 2)
IP = IPN, comp. Fig.1
IP = 0
IP = IPN
IP = IPR
IP > IPR
1) For 3 s in a 60 s interval (RMS ≤ IPN).
2) Limited by output driver.
Min.
+14.3
-14.3
-
-20
-
80
-
-
-
-
-
Typ.
+15.0
-15.0
-
-
2.5
127
9.5
19
37
105
-
Max.
+15.7
-15.7
5.0
+20
-
150
12
25
50
110
120
Unit
V
V
A
A
V
Ω
mA
mA
mA
mA
Min.
+11.4
-11.4
-
-15
-
80
-
-
-
-
-
Typ.
+12.0
-12.0
-
-
2.5
127
9.5
19
37
80
-
Max.
+12.6
-12.6
5.0
+15
-
150
12
25
50
90
95
Unit
V
V
A
A
V
Ω
mA
mA
mA
mA
CMS2005.DSE.03
Data sheet
Page 3 of 13
Subject to technical changes
June 8th 2015

3 Page

CMS2005 pdf
CMS2005
MagnetoResistive Current Sensor (IPN = 5 A)
General Data
Symbol Parameter
Tamb Ambient temperature 1)
Tstg Storage temperature
TB Busbar temperature 1)
TTHT Solder temperature 2)
m Mass
Conditions
For 7 seconds
Min.
-25
-25
-25
-
-
Typ.
-
-
-
-
4.3
Max.
+85
+105
+105
265
4.5
Unit
°C
°C
°C
°C
g
Dynamic Data
Tamb = 25°C; VCC = ±15 V; unless otherwise specified.
Symbol Parameter
Conditions
treac
trise
tresp
fco
ΔV TR
trecTR
Reaction time 3)
Rise time 3)
Response time 3)
Upper cut-off frequency
Transient output voltage
Transient recovery time
10 % IPN to 10 % Iout,N
10 % Iout,N to 90 % Iout,N
90 % IPN to 90 % Iout,N
-3 dB
0 V to 530 V (3.7 kV/µs); see Fig. 3
0 V to 530 V (3.7 kV/µs); see Fig. 3
Min.
-
-
-
200
-
-
Typ.
0.075
1.0
1.1
-
0.075 4)
3.0
Max.
0.15 4)
1.7 4)
1.5 4)
-
0.085
3.5 4)
Unit
µs
µs
µs
kHz
V
µs
Isolation Characteristics
Symbol Parameter
VI
Vimp
dcp
dcl
VB
VB
ESD
Isolation test voltage (RMS)
Impulse withstand voltage
Creepage distance
Clearance distance 5)
System voltage (RMS) 6)
System voltage (RMS) 6)
Electro static test voltage
Conditions
50/60 Hz, 60 s
1.2/50 µs
Reinforced isolation PD2, CAT III
Basic isolation PD2, CAT III
HBM, contact discharge method
Min.
4.4
8.0
6.2
6.2
300
600
-
Typ.
-
-
-
-
-
-
8.0
Max.
-
-
-
-
-
-
-
Unit
kV
kV
mm
mm
V
V
kV
1) Operating condition.
2) Depending on the size of the primary conductor, variation of pre-heating parameters (temperature, duration) might be necessary in order to ensure sufficient
soldering results.
3) IP = IPN, di/dt of 70 A/µs.
4) With recommended RC output filter values according to page 9.
5) If mounted on a PCB, the minimal clearance distance might be reduced according to the PCB layout (e.g. diameter of drilling holes and annular rings).
6) According to DIN EN 50178, DIN EN 61800-5-1.
CMS2005.DSE.03
Data sheet
Page 6 of 13
Subject to technical changes
June 8th 2015

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