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PDF APT45M100J Fiche technique - Microsemi

Numéro de référence APT45M100J
Description N-Channel MOSFET
Fabricant Microsemi 
Logo Microsemi Logo 



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APT45M100J Datasheet, Description
APT45M100J
1000V, 45A, 0.18Ω Max
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
SS
G D SOT-227
"UL Recognized"
IS OTO P ®
file # E145592
APT45M100J
Single die MOSFET
G
D
S
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS
TJ,TSTG
VIsolation
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.)
WT Package Weight
Torque Terminals and Mounting Screws.
Ratings
45
28
260
±30
4075
33
Unit
A
V
mJ
A
Min
-55
2500
Typ Max Unit
960 W
0.13
°C/W
0.11
150 °C
V
1.03 oz
29.2 g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com
APT45M100J Fiche technique
200
180 VGS = 10V
160
TJ = -55°C
140
120
100
80 TJ = 25°C
60
40
20 TJ = 125°C
0 TJ = 150°C
0 5 10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 33A
2.5
2.0
1.5
1.0
0.5
0-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
90
80
70
TJ = -55°C
60
TJ = 25°C
50
TJ = 125°C
40
30
20
10
0
0 10 20 30
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 33A
14
40
12
VDS = 200V
10
VDS = 500V
8
6
VDS = 800V
4
2
0
0 100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
70
TJ = 125°C
60
50
VGS= 6, 7, 8 & 9V
APT45M100J
40
30 5V
20
10 4.5V
0
0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
250
200
VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
150
TJ = -55°C
100 TJ = 25°C
TJ = 125°C
50
00
30,000
1 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
10,000
Ciss
1000
100
Coss
Crss
10
0 200 400 600 800 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
250
200
150
TJ = 25°C
100
TJ = 150°C
50
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage

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