DataSheet.fr

PDF GS3MBF Fiche technique - MDD

Numéro de référence GS3MBF
Description SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Fabricant MDD 
Logo MDD Logo 



2 Pages
		

No Preview Available !

GS3MBF Datasheet, Description
GS3ABF THRU GS3MBF
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 3.0 Amperes
0.146(3.70)
0.138(3.50)
0.051(1.30)
0.043(1.10)
SMBF
Cathode Band
Top View
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Lead free in comply with EU RoHS 2011/65/EU diretives
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
0.216(5.5)
0.200(5.1)
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS GS3ABF GS3BBF GS3DBF GS3GBF GS3JBF GS3KBF GS3MBF
Marking code
S3AB S3BB S3DB S3GB S3JB S3KB S3MB
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
3.0
100
1.1
5.0
200.0
Typical junction capacitance (NOTE 1)
CJ
45
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Volts
µA
pF
Typical thermal resistance (NOTE 2)
RθJA
40 C/W
Operating junction and storage temperature range TJ,TSTG
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.5x0.5(12.7x12.7mm) copper pad areas
-55 to +150
C



Constitution2 Pages
Télécharger[ GS3MBF.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
GS3MBFSURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIERMDD
MDD

RéférenceDescriptionFabricant
H6060Monolithic low-power CMOS device combining a programmable timerEM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EHighly integrated Super I/O using the Low Pin Count InterfaceITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


www.DataSheet.fr    |   2020   |  Contactez-nous    |   Recherche