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PDF 25PTS Fiche technique - nELL

Numéro de référence 25PTS
Description Medium Power Thyristors
Fabricant nELL 
Logo nELL Logo 

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25PTS Datasheet, Description
SEMICONDUCTOR
25PTS Series RRooHHSS
Nell High Power Products
Medium Power Thyristors
(Stud Version), 25A
FEATURES
Improved glass passivation for high reliability
and exceptional stability at high temperature
High dI/dt and dV/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600 V VDRM/ VRRM
RoHS compliant
Designed and qualified for industrial and consumer level
TYPICAL APPLICATIONS
Medium power switching
Phase control applications
Can be supplied to meet stringent military, aerospace and
other high reliability requirements
Available
RoHS*
COMPLIANT
TO-208AA(TO-48)
PRODUCT SUMMARY
IT(AV)
25A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
ITSM
I2t
VDRM/VRRM
tq
TC
50 HZ
60 HZ
50 HZ
60 HZ
Typical
TJ
ELECTRICAL SPECIFICATIONS
VALUES
25
85
40
420
440
882
804
600 to 1600
110
-65 to 125
UNITS
A
ºC
A
A
A2s
V
µS
ºC
VOLTAGE RATINGS
TYPE
NUMBER
25PTS
VOLTAGE
CODE
06
08
10
12
VDRM/VRRM,MAXIMUM
AND OFF-STATE VOLTAGE (1)
V
600
800
1000
1200
VRSM,MAXIMUM
NON-REPETITIVE PEAK VOLTAGE (2)
V
700
900
1100
1300
IDRM/IRRM,MAXIMUM
AT TJ = TJ MAXIMUM
mA
10
16 1600
1700
Note
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 As
(2) For voltage pulses with tp 5 ms
www.nellsemi.com
Page 1 of 6
25PTS Datasheet

1 Page

25PTS Fiche technique
SEMICONDUCTOR
25PTS Series RRooHHSS
Nell High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
TEST CONDITIONS
VALUES
PGM
PG(AV)
IGM
TJ = TJ maximum
TJ = TJ maximum
8.0
2.0
1.5
-VGM
IGT
TJ = TJ maximum
TJ = -65°C
TJ = 25°C
TJ = 125°C
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
10
90
60
35
VGT
IGD
VGD
TJ = -65°C
TJ = 25°C
TJ =125°C
TJ = TJ maximum, VDRM = Rated value
Maximum gate current/voltage
TJ = TJ maximum,
VDRM = Rated value
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
3.0
1.5
1.0
2.0
0.2
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFCATIONS
PARAMETER
SYMBOL
Maximum junction operating
and storage temperature range
TJ,Tstg
TEST CONDITIONS
VALUES
- 65 to125
UNITS
ºC
Maximum thermal resistace,
junction to case
Maximum thermal resistance
case to heatsink
RthJC
DC operation
RthCS
Mounting surface, smooth, flat and greased
0.75
0.35
K/W
Allowable mounting torque
Approximate weight
Case style
Not-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
3.4
+0
-10%
(30)
N·m
(lbf · in)
+0
23 -10%
(20)
11.5
0.41
N·m
(lbf · in)
g
oz.
TO-208AA (TO-48)
ΔRthJC CONDUCTION
CONDUCTION ANGEL SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.17
0.13
120° 0.21
0.22
90° 0.27
0.30
60° 0.40
0.42
30° 0.69
0.70
Note
• The table above shows the increment of thermal resistance RthJC when devices
operate at different conduction angles than DC
TEST CONDUCTIONS UNITS
TJ = TJ maximum
K/W
www.nellsemi.com
Page 3 of 6

3 Page

25PTS pdf
SEMICONDUCTOR
ORDERING INFORMATION TABLE
25PTS Series RRooHHSS
Nell High Power Products
Device code
25 PT 12
SM
1 2 3 45
1 - Current Code
2 - PT for SCR series
3 - Voltage code × 100 = VRRM (see Voltage Ratings table)
4 - S for stud type
5 - None = Stud base TO-208AA (TO-48) 1/4”-28 UNF-2A
M = Stud base TO-208AA (TO-48) M6×1
GLASS - METAL SEAL
www.nellsemi.com
AII dimensions in millimeters (inches)
Page 6 of 6

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