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PDF 25PT Fiche technique - nELL

Numéro de référence 25PT
Description Stansard SCRs
Fabricant nELL 
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25PT Datasheet, Description
SEMICONDUCTOR
25PT Series RRooHHSS
Stansard SCRs, 25A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
25
600 to 1200
4 to 40
Unit
A
V
mA
A
K AG
K AG
TO-220AB (Non-lnsulated)
(25PTxxA)
TO-220AB (lnsulated)
(25PTxxAI)
DESCRIPTION
The 25PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D2PAK)
(25PTxxH)
TO-220F (ITO-220AB)
(25PTxxAF)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated/TO-220F
TO-263/TO-220AB
TO-220AB insulated/TO-220F
F =50 Hz
F =60 Hz
tp = 10 ms
Tc=100°C
Tc=83°C
Tc=100°C
Tc=83°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
Tj = 125ºC
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
VALUE
25
16
300
314
450
50
4
10
1
600 to 1200
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 6
25PT Fiche technique
SEMICONDUCTOR
25PT Series RRooHHSS
ORDERING INFORMATION
ORDERING TYPE
MARKING
25PTxxA-y
25PTxxA-y
25PTxxAI-y
25PTxxAI-y
25PTxxAF-y
25PTxxAF-y
25PTxxH-y
25PTxxH-y
Note: xx = voltage , y = sensitivity
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-220F
TO-263(D2PAK)
WEIGHT
2.0g
2.3g
2.0g
2.0g
BASE Q,TY DELIVERY MODE
50 Tube
50 Tube
50 Tube
50 Tube
ORDERING INFORMATION SCHEME
Current
25 = 25A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
12 = 1200V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
AF = TO-220F ( ITO-220AB)
H = TO-263 (D2PAK)
IGT Sensitivity
D = 4~10mA
Blank = 4~40mA
25 PT 06
-D
Fig.1 Maximum average power dissipation
versus average on-state current.
P (W)
22
20
18
16
14
12
10
8
6 360°
4
2
0
IT(AV)(A)
α
0 2 4 6 8 10 12 14 16
Fig.2 Average and DC on-state current
versus case temperature.
lT(AV)(A)
28
26
24 D.C.
22
20
18
16
14 α=180°
12
10
8
6
4
2
0
0 25
TO-220ABins
TO-220F
Tcase(°C)
50 75
D²PAK
TO-220AB
100 125
www.nellsemi.com
Page 3 of 6

3 Page

25PT pdf
SEMICONDUCTOR
25PT Series RRooHHSS
Case Style
ITO-220AB
10.6
10.4
3.4
3.1
16.4
15.4
A
KG
3.7
3.2 7.1
6.7
16.0
15.8
2.8
2.6
10°
3.3
3.1
2.54
TYP
0.9
0.7
2.54
TYP
4.8
4.6
0.48
0.44
2.85
2.65
All dimensions in millimeters
13.7
13.5
2(A)
3(G)
1(K)
www.nellsemi.com
Page 6 of 6

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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