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PDF 20PT Fiche technique - nELL

Numéro de référence 20PT
Description Stansard SCRs
Fabricant nELL 
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20PT Datasheet, Description
SEMICONDUCTOR
20PT Series RRooHHSS
Stansard SCRs, 20A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
20
600 to 1000
3 to 25
Unit
A
V
mA
A
KAG
K AG
TO-220AB (Non-lnsulated)
(20PTxxA)
TO-220AB (lnsulated)
(20PTxxAI)
DESCRIPTION
The 20PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D2PAK)
(20PTxxH)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
tp = 10 ms
TC=100°C
TC=80°C
TC=100°C
TC=80°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
Tj = 125ºC
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
VALUE
20
13
200
220
200
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 5
20PT Fiche technique
SEMICONDUCTOR
20PT Series RRooHHSS
ORDERING INFORMATION SCHEME
Current
20 = 20A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
H = TO-263 (D2PAK)
IGT Sensitivity
D = 4~10 mA
Blank = 3~25mA
20 PT 06 AI D
Fig.1 Maximum average power dissipation
versus average on-state current.
P (W)
16
14 α=180°
12
10
8
6
4 360°
2
IT(AV)(A)
α
0
0 24
6 8 10 12
Fig.3 Average and D.C. on-state current
versus ambient temperature.
(copper surface under tab: S=1cm2)
(D2PAK)
lT(AV)(A)
4.0
3.5
3.0 D.C.
2.5
2.0 α=180°
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50 75
100 125
Fig.2 Average and D.C. on-state current
versus case temperature.
lT(AV)(A)
27
24
21 D.C.
18
15 α=180°
TO-220AB
TO-263
12
9 TO-220AB
insulated
6
3 Tcase(°C)
0
0 25 50 75
100
125
Fig.4 Relative variation of thermal impedance
versus pulse duration.
1.00
K=[Zth/Rth]
Zth(j-c)
0.10
Zth(j-a)
0.01
1E-3
1E-2
tP(s)
1E-1 1E+0
1E+1
1E+2 5E+2
www.nellsemi.com
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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