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PDF 20PT Fiche technique - nELL

Numéro de référence 20PT
Description Stansard SCRs
Fabricant nELL 
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20PT Datasheet, Description
SEMICONDUCTOR
20PT Series RRooHHSS
Stansard SCRs, 20A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
20
600 to 1000
3 to 25
Unit
A
V
mA
A
KAG
K AG
TO-220AB (Non-lnsulated)
(20PTxxA)
TO-220AB (lnsulated)
(20PTxxAI)
DESCRIPTION
The 20PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
suitable for general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current capabilities.
A
KA
G
TO-263 (D2PAK)
(20PTxxH)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
ITSM
I2t
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
Tj
TEST CONDITIONS
TO-263/TO-220AB
TO-220AB insulated
TO-263/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
tp = 10 ms
TC=100°C
TC=80°C
TC=100°C
TC=80°C
t = 20 ms
t = 16.7 ms
F = 60 Hz
Tj = 125ºC
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
VALUE
20
13
200
220
200
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 5
20PT Fiche technique
SEMICONDUCTOR
20PT Series RRooHHSS
ORDERING INFORMATION SCHEME
Current
20 = 20A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
H = TO-263 (D2PAK)
IGT Sensitivity
D = 4~10 mA
Blank = 3~25mA
20 PT 06 AI D
Fig.1 Maximum average power dissipation
versus average on-state current.
P (W)
16
14 α=180°
12
10
8
6
4 360°
2
IT(AV)(A)
α
0
0 24
6 8 10 12
Fig.3 Average and D.C. on-state current
versus ambient temperature.
(copper surface under tab: S=1cm2)
(D2PAK)
lT(AV)(A)
4.0
3.5
3.0 D.C.
2.5
2.0 α=180°
1.5
1.0
0.5
0.0
0
25
Tamb(°C)
50 75
100 125
Fig.2 Average and D.C. on-state current
versus case temperature.
lT(AV)(A)
27
24
21 D.C.
18
15 α=180°
TO-220AB
TO-263
12
9 TO-220AB
insulated
6
3 Tcase(°C)
0
0 25 50 75
100
125
Fig.4 Relative variation of thermal impedance
versus pulse duration.
1.00
K=[Zth/Rth]
Zth(j-c)
0.10
Zth(j-a)
0.01
1E-3
1E-2
tP(s)
1E-1 1E+0
1E+1
1E+2 5E+2
www.nellsemi.com
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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