DataSheet.fr

PDF 10PT Fiche technique - nELL

Numéro de référence 10PT
Description Stansard SCRs
Fabricant nELL 
Logo nELL Logo 

5 Pages
		

No Preview Available !

10PT Datasheet, Description
SEMICONDUCTOR
10PT Series RRooHHSS
Stansard SCRs, 10A
Main Features
Symbol
IT(RMS)
VDRM/VRRM
IGT
Value
10
600 to 1000
15
Unit
A
V
mA
DESCRIPTION
The 10PT series of silicon controlled rectifiers are high
performance glass passivated technology, and are
designed for power supply up to 400Hz on resistive or
inductive load.
A
KA
G
TO-251 (I-PAK)
(10PTxxF)
A
A
KA
G
TO-252 (D-PAK)
(10PTxxG)
KAG
KA G
TO-220AB (Non-lnsulated)
(10PTxxA)
TO-220AB (lnsulated)
(10PTxxAI)
2(A)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I2t Value for fusing
IT(RMS)
IT(AV)
ITSM
I2t
TO-251/TO-252/TO-220AB
TO-220AB insulated
TO-251/TO-252/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
tp = 10 ms
TC=100°C
TC=90°C
TC=100°C
TC=90°C
t = 20 ms
t = 16.7 ms
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
Peak gate current
Maximum gate power
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
dI/dt
IGM
PGM
PG(AV)
VDRM
VRRM
Tstg
F = 60 Hz
Tp = 20 µs
Tp =20µs
Tj =125ºC
Tj = 125ºC
Tj = 125ºC
Tj = 125ºC
Tj =125ºC
Operating junction temperature range
Tj
VALUE
10
6.4
100
105
50
50
4
10
1
600 to 1000
- 40 to + 150
- 40 to + 125
UNIT
A
A
A
A2s
A/µs
A
W
W
V
ºC
www.nellsemi.com
Page 1 of 5
10PT Fiche technique
SEMICONDUCTOR
10PT Series RRooHHSS
ORDERING INFORMATION SCHEME
Current
10 = 10A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (IPAK)
G = TO-252 (DPAK)
10 PT 06
Fig.1 Maximum average power dissdipation
versus average on-state current
P(W)
12
10
α=120°
α=90°
8
α=60°
6
α=30°
4
α=180°
2
IT(AV)(A)
0
0 1 2 34 5 6
DC
360°
α
78
9
Fig.2 Correlation between maximum average
power dissipation and maximum
allowable temperature(Tamb and Tlead)
P(W)
12
α=180°
10
Tlead(°C)
Rth=6°C/W Rth=4°C/W Rth=2°C/W Rth=0°C/W
100
8 105
6 110
4 115
2 120
Tamb(°C)
0
125
0 20 40 60 80 100 120 140
www.nellsemi.com
Page 3 of 5

3 Page




Constitution5 Pages
Télécharger[ 10PT.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
10PAVariable CoilsTOKO
TOKO
10PCVxxxAnalog Input Power ControllerCrydom
Crydom
10PH05DiodeAmerican Microsemiconductor
American Microsemiconductor
10PH10DiodeAmerican Microsemiconductor
American Microsemiconductor
10PH100DiodeAmerican Microsemiconductor
American Microsemiconductor
10PH20DiodeAmerican Microsemiconductor
American Microsemiconductor
10PH40DiodeAmerican Microsemiconductor
American Microsemiconductor
10PH60DiodeAmerican Microsemiconductor
American Microsemiconductor
10PH80DiodeAmerican Microsemiconductor
American Microsemiconductor

RéférenceDescriptionFabricant
H6060Monolithic low-power CMOS device combining a programmable timerEM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EHighly integrated Super I/O using the Low Pin Count InterfaceITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


www.DataSheet.fr    |   2019   |  Contactez-nous    |   Recherche