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PDF FDS9933BZ Fiche technique - Fairchild Semiconductor

Numéro de référence FDS9933BZ
Description Dual P-Channel 2.5V Specified PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 

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FDS9933BZ Datasheet, Description
March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
tm
-20V, -4.9A, 46m
Features
General Description
„ Max rDS(on) = 46mat VGS = -4.5V, ID = -4.9A
„ Max rDS(on) = 69mat VGS = -2.5V, ID = -4.0A
„ Low gate charge (11nC typical).
„ High performance trench technology for extremely low rDS(on).
„ HBM ESD protection level >3kV (Note 3).
„ RoHS Compliant
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
„ Battery Charging
„ Load Switching
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
D1 7
D1 8
Q 12
Q 21
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-4.9
-30
1.6
0.9
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
40
78
°C/W
Device Marking
FDS9933BZ
Device
FDS9933BZ
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
1
www.fairchildsemi.com
FDS9933BZ Fiche technique
Typical Characteristics TJ = 25°C unless otherwise noted
30
VGS = -4.5V
25
20
15
VGS = -3.5V
VGS = -3V
VGS = -2.5V
10
5 PULSE DURATION = 80µs VGS = -2V
DUTY CYCLE = 0.5%MAX
0
01234
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
3.0
PULSE DURATION = 80µs
2.5 DUTY CYCLE = 0.5%MAX
2.0 VGS = -2V VGS = -2.5V
VGS = -3V
1.5
1.0
0.5
0
VGS = -3.5V
5 10 15 20
-ID, DRAIN CURRENT(A)
VGS = -4.5V
25 30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = -4.9A
VGS = -4.5V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On- Resistance
vs Junction Temperature
30
PULSE DURATION = 80µs
25 DUTY CYCLE = 0.5%MAX
20 VDS = -5.0V
15
10
5
0
0.5
TJ = 150oC
TJ = 25oC
TJ = -55oC
1.0 1.5 2.0 2.5 3.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
3.5
250
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
200
ID = -4.9A
150
100
TJ = 125oC
50
TJ = 25oC
0
1.5 2.0 2.5 3.0 3.5 4.0
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
4.5
100
VGS = 0V
10
1
TJ = 150oC
0.1
TJ = 25oC
0.01
TJ = -55oC
1E-3
0.0
0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
3
www.fairchildsemi.com

3 Page

FDS9933BZ pdf
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
FPS™
PDP-SPM™
The Power Franchise®
Build it Now™
CorePLUS™
F-PFS™
FRFET®
Power-SPM™
PowerTrench®
tm
CorePOWER™
CROSSVOLT
CTL™
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Programmable Active Droop™
QFET®
QS™
TinyBoost™
TinyBuck™
TinyLogic®
Current Transfer Logic™
EcoSPARK®
GTO™
IntelliMAX™
Quiet Series™
RapidConfigure™
TINYOPTO™
TinyPower™
EfficentMax™
ISOPLANAR™
Saving our world 1mW at a time™ TinyPWM™
EZSWITCH™ *
®
tm
Fairchild®
Fairchild Semiconductor®
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
tm
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
UniFET™
VCX™
VisualMax™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
www.fairchildsemi.com

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