DataSheet.fr

PDF FDMJ1032C Fiche technique - Fairchild Semiconductor

Numéro de référence FDMJ1032C
Description Dual N & P-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 

11 Pages
		

No Preview Available !

FDMJ1032C Datasheet, Description
FDMJ1032C
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 20V, 3.2A, 90mP-Channel: -20V, -2.5A, 160m
September 2007
tm
Features
Q1: N-Channel
„ Max rDS(on) = 90mat VGS = 4.5V, ID = 3.2A
„ Max rDS(on) = 130mat VGS = 2.5V, ID = 2.5A
Q2: P-Channel
„ Max rDS(on) = 160mat VGS = -4.5V, ID = -2.5A
„ Max rDS(on) = 230mat VGS = -2.5V, ID = -2.0A
„ Max rDS(on) = 390mat VGS = -1.8V, ID = -1.0A
„ Low gate charge, high power and current handling
capability
General Description
This dual N and P-Channel enhancement mode Power
MOSFET is produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
„ Battery management
„ RoHS Compliant
Pin 1
S1 S2 G2
Bottom Drain Contact
D1 D2
G1 S1 S2
SC-75 MicroFET
S2 4
S1 5
G1 6
3 G2
2 S2
1 S1
Bottom Drain Contact
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
TA = 25°C
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
Thermal Characteristics
Q1 Q2
20 -20
±12 ±8
3.2 -2.5
12 -12
1.4
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient, Single Operation
Thermal Resistance, Junction to Ambient, Single Operation
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
89
182
°C/W
Device Marking
032
Device
FDMJ1032C
Package
SC-75 MicroFET
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
1
www.fairchildsemi.com
FDMJ1032C Fiche technique
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode
Forward Voltage
VGS = 0V, IS = 1.16A
VGS = 0V, IS = -1.2A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 3.2A, di/dt = 100A/s
Q2
IF = -2.5A, di/dt = 100A/s
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
-0.8 -1.2
12
14
2.5
4
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
a. 89°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 182°C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
3
www.fairchildsemi.com

3 Page

FDMJ1032C pdf
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
0.001
10-5
SINGLE PULSE
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
102
Figure 12. Transient Thermal Response Curve
103
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
6
www.fairchildsemi.com

6페이지



Constitution11 Pages
Télécharger[ FDMJ1032C.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
FDMJ1032CDual N & P-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor

RéférenceDescriptionFabricant
H6060Monolithic low-power CMOS device combining a programmable timerEM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EHighly integrated Super I/O using the Low Pin Count InterfaceITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


www.DataSheet.fr    |   2019   |  Contactez-nous    |   Recherche