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PDF FLK107MH-14 Fiche technique - Eudyna Devices

Numéro de référence FLK107MH-14
Description X / Ku Band Power GaAs FET
Fabricant Eudyna Devices 
Logo Eudyna Devices Logo 

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FLK107MH-14 Datasheet, Description
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 6.5dB(Typ.)
• High PAE: ηadd = 31%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLK107MH-14
X, Ku Band Power GaAs FET
DESCRIPTION
The FLK102MH-14 is a power GaAs FET that is designed for general
purpose applications in the Ku-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
7.5
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
-
-
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Vp
VGSO
P1dB
G1dB
ηadd
VDS = 5V, IDS = 20mA
IGS = -20µA
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 14.5 GHz
-1.0
-5
29.0
5.5
-
Limit
Typ. Max.
400 600
200 -
-2.0 -3.5
--
30.0 -
6.5 -
31 -
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 15 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
August 1999
1
FLK107MH-14 Fiche technique
+j25
14
+j50
15
+j100
13
12
+j10
11
10GHz
0
16
10
14
16
50
15
+j250
100 250
10GHz
-j10
-j25
13
12
-j50
11 -j250
-j100
FLK107MH-14
X, Ku Band Power GaAs
S11 +90°
S22
1.6
1.2
10GHz
.08 11 12
13
SCALE FOR |S12|
0.2
180°
0.1
16
.04
12
10GHz 14
15
14
S21
S12
0°
15
16
-90°
FREQUENCY
S11
(MHZ)
MAG ANG
500
1000
10000
10500
11000
11500
12000
12500
13000
13500
14000
14500
15000
15500
16000
.949 -99.8
.921 -137.6
.783 -6.8
.769 -22.8
.751 -39.7
.730 -57.4
.699 -76.9
.659 -98.1
.609 -119.9
.544 -142.1
.456 -162.6
.331 179.3
.170 -155.0
.528 -132.8
.878 -174.9
S-PARAMETERS
VDS = 10V, IDS = 240mA
S21 S12
MAG ANG
MAG ANG
8.893
5.628
.924
.932
.959
.981
1.032
1.109
1.151
1.255
1.402
1.521
1.764
1.697
1.225
131.6
114.8
90.5
85.8
79.8
74.2
71.9
60.8
53.5
44.7
30.5
19.7
-4.8
-50.1
-99.6
.023 47.7
.028 37.1
.039 71.6
.038 64.4
.039 67.8
.043 63.7
.049 62.1
.044 63.5
.045 64.8
.045 51.5
.046 37.2
.045 7.2
.063 -39.7
.108 -107.7
.158 -171.2
S22
MAG
ANG
.275 -58.0
.297 -80.9
.852 171.3
.857 166.9
.843 161.7
.827 156.0
.825 149.9
.820 142.6
.824 134.6
.851 125.6
.890 113.9
.913 102.8
.875 89.2
.654 69.0
.226 87.9
3

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