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PDF FLC257MH-6 Fiche technique - Eudyna Devices

Numéro de référence FLC257MH-6
Description C-Band Power GaAs FET
Fabricant Eudyna Devices 
Logo Eudyna Devices Logo 

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FLC257MH-6 Datasheet, Description
FLC257MH-6
FEATURES
• High Output Power: P1dB = 34.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: ηadd = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC257MH-6 is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with
gate resistance of 200.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
15
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS =600mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS =50mA
-1.0
Gate Source Breakdown Voltage VGSO IGS = -50µA
-5
Limit
Typ. Max.
1000 1500
500 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 6.4 GHz
32.5 34.0 -
8.0 9.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 36 -
%
Thermal Resistance
CASE STYLE: MH
Rth Channel to Case
- 8 10
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLC257MH-6 Fiche technique
FLC257MH-6
C-Band Power GaAs FET
+j50
+j25
5GHz
5.5
+j10
88
7.5
7
0 6.5 7.5
6
5.5 5GHz
25
7
-j10
6
6.5
50
100
+j100
+j250
250
-j250
-j25 -j100
-j50
S11 +90°
S22
180°
6
5.5
5GHz 5
6 6.5
6.5
4 321
SCALE FOR |S21|
7
8 7.5
7
.02 8
7.5
.04
.06
.08
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
500
5000
5500
6000
6500
7000
7500
8000
.937 -142.8
.818 134.9
.729 120.3
.542 99.1
.166 67.8
.338 -148.2
.667 -177.6
.814 161.6
S-PARAMETERS
VDS = 10V, IDS = 600mA
S21 S12
MAG ANG
MAG
ANG
7.241
1.418
1.596
1.737
1.912
1.664
1.231
.810
109.5
91.8
85.8
64.9
50.3
20.5
-1.8
-16.0
.020 30.3
.029 86.1
.031 79.7
.038 69.2
.044 41.5
.042 5.6
.034 -25.6
.025 -44.4
S22
MAG
ANG
.351 -157.1
.719 -163.9
.751 -167.5
.800 -170.6
.839 -178.0
.856 172.9
.832 165.7
.825 160.9
3

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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