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PDF FLC107WG Fiche technique - Eudyna Devices

Numéro de référence FLC107WG
Description C-Band Power GaAs FET
Fabricant Eudyna Devices 
Logo Eudyna Devices Logo 

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FLC107WG Datasheet, Description
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE: ηadd = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLC107WG
C-Band Power GaAs FET
DESCRIPTION
The FLC107WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
7.5
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 20mA -1.0
Gate Source Breakdown Voltage VGSO IGS = -20µA
-5
Limit
Typ. Max.
400 600
200 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 8 GHz
28.5 30.0 -
7.0 8.0 -
Power-added Efficiency
ηadd
- 36 -
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: WG
Rth Channel to Case
- 16 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLC107WG Fiche technique
FLC107WG
C-Band Power GaAs FET
+j50
+j10
0
-j10
+j25
9
8
7
10
6
5 10
10
4
9
38
7
25
6
2GHz 5 4 3
50
2GHz
100
-j25
-j50
FREQUENCY
S11
(MHZ)
MAG ANG
+j100
S11
S22
+90°
2GHz
S21
S12
+j250
3
4
5
250
180°
4 3 21
SCALE FOR |S21|
6 2GHz
9 7 43
.02 10 7 9
10
-j250
.04
.06
0°
-j100
.08
-90°
S-PARAMETERS
VDS = 10V, IDS = 250mA
S21 S12
MAG ANG
MAG ANG
S22
MAG
ANG
500
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
.945 -80.8
.912 -121.7
.901 -154.5
.897 -168.3
.894 -176.5
.890 174.8
.884 164.2
.871 152.7
.851 143.1
.841 135.2
.831 126.5
10.188
6.711
3.629
2.404
1.817
1.494
1.288
1.117
.968
.875
.854
131.0
103.4
73.4
54.1
38.7
24.1
8.7
-7.3
-21.1
-32.8
-44.2
.024 44.6
.031 21.6
.033 .3
.031 -10.1
.029 -14.0
.029 -16.6
.029 -17.9
.030 -22.5
.030 -15.8
.034 -12.8
.044 -10.3
.260 -61.5
.277 -91.4
.368 -114.0
.469 -124.2
.548 -131.8
.601 -139.3
.640 -148.9
.676 -160.1
.708 -168.9
.737 -175.2
.759 179.6
3

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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