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PDF FLC107WG Fiche technique - Eudyna Devices

Numéro de référence FLC107WG
Description C-Band Power GaAs FET
Fabricant Eudyna Devices 
Logo Eudyna Devices Logo 

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FLC107WG Datasheet, Description
FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE: ηadd = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLC107WG
C-Band Power GaAs FET
DESCRIPTION
The FLC107WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
7.5
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 20mA -1.0
Gate Source Breakdown Voltage VGSO IGS = -20µA
-5
Limit
Typ. Max.
400 600
200 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 8 GHz
28.5 30.0 -
7.0 8.0 -
Power-added Efficiency
ηadd
- 36 -
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: WG
Rth Channel to Case
- 16 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLC107WG Fiche technique
FLC107WG
C-Band Power GaAs FET
+j50
+j10
0
-j10
+j25
9
8
7
10
6
5 10
10
4
9
38
7
25
6
2GHz 5 4 3
50
2GHz
100
-j25
-j50
FREQUENCY
S11
(MHZ)
MAG ANG
+j100
S11
S22
+90°
2GHz
S21
S12
+j250
3
4
5
250
180°
4 3 21
SCALE FOR |S21|
6 2GHz
9 7 43
.02 10 7 9
10
-j250
.04
.06
0°
-j100
.08
-90°
S-PARAMETERS
VDS = 10V, IDS = 250mA
S21 S12
MAG ANG
MAG ANG
S22
MAG
ANG
500
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
.945 -80.8
.912 -121.7
.901 -154.5
.897 -168.3
.894 -176.5
.890 174.8
.884 164.2
.871 152.7
.851 143.1
.841 135.2
.831 126.5
10.188
6.711
3.629
2.404
1.817
1.494
1.288
1.117
.968
.875
.854
131.0
103.4
73.4
54.1
38.7
24.1
8.7
-7.3
-21.1
-32.8
-44.2
.024 44.6
.031 21.6
.033 .3
.031 -10.1
.029 -14.0
.029 -16.6
.029 -17.9
.030 -22.5
.030 -15.8
.034 -12.8
.044 -10.3
.260 -61.5
.277 -91.4
.368 -114.0
.469 -124.2
.548 -131.8
.601 -139.3
.640 -148.9
.676 -160.1
.708 -168.9
.737 -175.2
.759 179.6
3

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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