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PDF FLL120MK Fiche technique - Eudyna Devices

Numéro de référence FLL120MK
Description L-Band Medium & High Power GaAs FET
Fabricant Eudyna Devices 
Logo Eudyna Devices Logo 

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FLL120MK Datasheet, Description
FEATURES
• High Output Power: P1dB = 40.0dBm (Typ.)
• High Gain: G1dB = 10.0dB (Typ.)
• High PAE: ηadd = 40% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
FLL120MK
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLL120MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with
gate resistance of 50.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
37.5
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2400mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =240mA
IGS = -240µA
-1.0
-5
Limit
Typ. Max.
4000 6000
2000 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS = 0.55 IDSS (Typ.),
f = 2.3GHz
39.5 40.0
9.0 10.0
-
-
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 40 -
%
Thermal Resistance
CASE STYLE: MK
Rth Channel to Case
- 3.3 4.0
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLL120MK Fiche technique
FLL120MK
L-Band Medium & High Power GaAs FET
+j50
+j25
4.5
4.0
5.0 GHz
+j10
3.5 4.5
4.0
3.0 3.5
2.5 3.0
0
2.0 2.0
0.5GHz10
1.0
25 50
0.5GHz
5.0 GHz
100
-j10
+j100
250
+j250
-j250
S11 +90°
S22
0.5 GHz
180°
4 32
SCALE FOR |S21|
5.0 GHz
1 4.5
1.5 4.0 4.5
3.0
4.0
2.0
5.0 GHz
1 0.5GHz
0.1
-j25
-j50
-j100
0.2
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.959 -168.4
.953 -176.0
.953 -179.6
.951 177.0
.939 172.6
.914 165.1
.885 152.7
.836 134.0
.766 107.3
.690 71.6
S-PARAMETERS
VDS = 10V, IDS = 2200mA
S21 S12
MAG ANG
MAG ANG
S22
MAG
ANG
3.136
1.617
1.170
.978
.927
.936
.990
1.106
1.239
1.415
95.8
94.1
93.8
92.3
91.4
88.0
80.6
67.1
48.2
23.9
.008 31.0
.010 45.7
.011 64.3
.014 82.4
.021 89.1
.024 93.2
.033 94.6
.051 88.1
.067 77.3
.103 60.5
.824 179.4
.813 178.8
.810 177.7
.792 176.5
.778 174.0
.739 168.3
.695 158.9
.633 145.1
.559 128.0
.477 107.3
Download S-Parameters, click here
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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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