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PDF FLL57MK Fiche technique - Eudyna Devices

Numéro de référence FLL57MK
Description L-Band Medium & High Power GaAs FET
Fabricant Eudyna Devices 
Logo Eudyna Devices Logo 

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FLL57MK Datasheet, Description
FLL57MK
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB = 36.0dBm (Typ.)
• High Gain: G1dB = 11.5dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL57MK is a Power GaAs FET that is specifically designed to
provide high power at L-Band frequencies with gain, linearity and
efficiency superior to that of silicon devices. The performance in
multitone environments for Class AB operation make them ideally
suited for base station applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.2 and -2.2 mA respectively with
gate resistance of 100.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
21.4
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1100mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 90mA -1.0
Gate Source Breakdown Voltage VGSO IGS = -90µA
-5
Limit
Typ. Max.
1800 2700
1000 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS = 0.55IDSS (Typ.),
f = 2.3GHz
35.5 36.0 -
10.5 11.5 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 37 -
%
Thermal Resistance
CASE STYLE: MK
Rth Channel to Case
- 6.2 7.0
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLL57MK Fiche technique
FLL57MK
L-Band Medium & High Power GaAs FET
+j50
+j25
+j10
3.5
3
4
4.5
2.5
0
2
1.5
1
4
23
1 0.5 GHz
5.0 GHz
25 50
100
+j100
5.0 GHz
+j250
-j10 0.5 GHz
-j250
S11 +90°
S22
0.5 GHz
180°
8 642
SCALE FOR |S21|
1
2 3.5 4
3
2
4
3
4.5
0.5 GHz
4.5
5.0 GHz 5.0 GHz
0.1
-j25 -j100
-j50
0.2
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.929 -157.5
.927 -172.6
.914 179.9
.902 174.0
.887 167.6
.856 157.0
.806 140.9
.725 114.8
.609 71.9
.548 -0.6
S-PARAMETERS
VDS = 10V, IDS = 800mA
S21 S12
MAG ANG
MAG ANG
5.115
2.718
1.988
1.653
1.558
1.534
1.782
1.888
2.199
2.278
99.7
91.4
88.3
83.8
79.4
72.3
60.2
39.3
15.8
-24.0
.017 21.7
.018 24.6
.020 34.4
.022 41.1
.026 48.7
.034 42.7
.040 47.0
.057 35.5
.082 19.7
.096 -11.8
S22
MAG ANG
.661 -175.9
.669 -176.5
.660 -177.7
.651 -178.8
.621 179.8
.584 177.7
.527 174.3
.465 169.3
.396 162.0
.270 151.1
3

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


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