DataSheet.fr

PDF FLC057WG Fiche technique - Fujitsu

Numéro de référence FLC057WG
Description C-Band Power GaAs FET
Fabricant Fujitsu 
Logo Fujitsu Logo 

4 Pages
		

No Preview Available !

FLC057WG Datasheet, Description
FLC057WG
FEATURES
• High Output Power: P1dB = 27.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: ηadd = 38%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC057WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Channel Temperature
Tstg
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with
gate resistance of 1000.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
3.75
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 125mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =10mA
IGS = -10µA
-1.0
-5
Limit
Typ. Max.
200 300
100 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS 0.6 IDSS (Typ.),
f = 8 GHz
25.5 27.0 -
8.0 9.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 38 -
%
Thermal Resistance
CASE STYLE: WG
Rth Channel to Case
- 27 40
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLC057WG Fiche technique
FLC057WG
C-Band Power GaAs FET
+j25
+j50
+j100
S11
S22
+90°
+j10
0
-j10
10
9
8
7
6
10
5
25
50100
250
4 10
9
8
37
6 54
2
3
2
1GHz
-j25 -j100
1GHz
-j50
+j250
-j250
1GHz
2
180°
8 64 2
SCALE FOR |S21|
3 1GHz
4
5
6
2
9
10
.02
87
8
7
3
4
5
6
9
10
.04
.06
.08
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
500
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
.973 -47.9
.941 -85.1
.912 -129.5
.897 -151.8
.889 -164.8
.881 -176.2
.869 171.6
.847 159.0
.816 148.5
.787 139.7
.740 129.4
S-PARAMETERS
VDS = 10V, IDS = 125mA
S21 S12
MAG ANG
MAG ANG
7.249
5.946
3.846
2.675
2.058
1.712
1.506
1.339
1.199
1.125
1.149
147.9
121.8
86.0
62.2
44.1
27.8
11.2
-6.1
-21.6
-35.4
-49.4
.016 60.6
.026 38.1
.033 8.9
.033 -8.5
.032 -17.6
.033 -25.1
.033 -31.0
.035 -39.4
.033 -41.3
.037 -41.0
.045 -40.5
S22
MAG
ANG
.545 -20.4
.519 -38.2
.514 -66.2
.562 -86.5
.618 -101.2
.658 -113.0
.689 -125.1
.717 -138.5
.745 -149.3
.773 -157.4
.796 -163.1
3

3 Page




Constitution4 Pages
Télécharger[ FLC057WG.PDF ]

Liens de partage


Fiche technique recommandé

RéférenceDescriptionFabricant
FLC057WGC-Band Power GaAs FETFujitsu
Fujitsu

RéférenceDescriptionFabricant
H6060The H6060 is a monolithic low-power CMOS device combining a programmable timer and a series of voltage comparators on the same chip.EM Microelectronic - MARIN SA
EM Microelectronic - MARIN SA
IT8772EThe IT8772E is a highly integrated Super I/O using the Low Pin Count Interface. It provides the most commonly used legacy Super I/O functionality plus the latest Environment Control initiatives, including H/W Monitor and Fan Speed Controller.ITE
ITE

Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc. Ils sont en général fournis gratuitement, et se présentent très régulièrement sous la forme d'un document pdf.


www.DataSheet.fr    |   2018   |  Contactez-nous    |   Recherche