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PDF FLC057WG Fiche technique - Fujitsu

Numéro de référence FLC057WG
Description C-Band Power GaAs FET
Fabricant Fujitsu 
Logo Fujitsu Logo 

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FLC057WG Datasheet, Description
FLC057WG
FEATURES
• High Output Power: P1dB = 27.0dBm(Typ.)
• High Gain: G1dB = 9.0dB(Typ.)
• High PAE: ηadd = 38%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
C-Band Power GaAs FET
DESCRIPTION
The FLC057WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Channel Temperature
Tstg
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 4.4 and -0.25 mA respectively with
gate resistance of 1000.
3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
15
-5
3.75
-65 to +175
175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 125mA
-
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =10mA
IGS = -10µA
-1.0
-5
Limit
Typ. Max.
200 300
100 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V
IDS 0.6 IDSS (Typ.),
f = 8 GHz
25.5 27.0 -
8.0 9.0 -
Unit
mA
mS
V
V
dBm
dB
Power-added Efficiency
ηadd
- 38 -
%
Thermal Resistance
CASE STYLE: WG
Rth Channel to Case
- 27 40
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
FLC057WG Fiche technique
FLC057WG
C-Band Power GaAs FET
+j25
+j50
+j100
S11
S22
+90°
+j10
0
-j10
10
9
8
7
6
10
5
25
50100
250
4 10
9
8
37
6 54
2
3
2
1GHz
-j25 -j100
1GHz
-j50
+j250
-j250
1GHz
2
180°
8 64 2
SCALE FOR |S21|
3 1GHz
4
5
6
2
9
10
.02
87
8
7
3
4
5
6
9
10
.04
.06
.08
-90°
S21
S12
0°
FREQUENCY
S11
(MHZ)
MAG ANG
500
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
.973 -47.9
.941 -85.1
.912 -129.5
.897 -151.8
.889 -164.8
.881 -176.2
.869 171.6
.847 159.0
.816 148.5
.787 139.7
.740 129.4
S-PARAMETERS
VDS = 10V, IDS = 125mA
S21 S12
MAG ANG
MAG ANG
7.249
5.946
3.846
2.675
2.058
1.712
1.506
1.339
1.199
1.125
1.149
147.9
121.8
86.0
62.2
44.1
27.8
11.2
-6.1
-21.6
-35.4
-49.4
.016 60.6
.026 38.1
.033 8.9
.033 -8.5
.032 -17.6
.033 -25.1
.033 -31.0
.035 -39.4
.033 -41.3
.037 -41.0
.045 -40.5
S22
MAG
ANG
.545 -20.4
.519 -38.2
.514 -66.2
.562 -86.5
.618 -101.2
.658 -113.0
.689 -125.1
.717 -138.5
.745 -149.3
.773 -157.4
.796 -163.1
3

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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