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PDF D2088 Fiche technique - Toshiba Semiconductor

Numéro de référence D2088
Description 2SD2088
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 



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D2088 Datasheet, Description
2SD2088
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2088
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
Unit: mm
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60 ± 10
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO 8 V
Collector current
IC 2 A
Base current
IB
0.5 A
JEDEC
TO-92MOD
Collector power dissipation
PC
0.9 W
JEITA
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE
≈ 4 kΩ
≈ 800 Ω
EMITTER
1 2009-12-21
D2088 Fiche technique
2.0
500
250
1.6
IC – VCE
200 185
Common emitter
Ta = 25°C
180
1.2
175
0.8
IB = 170 μA
0.4
PC = 0.9 W
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
Common emitter
IC/IB = 1000
1 Ta = 55°C
25
100
0.6
0.3
0.5
1
Collector current IC (A)
3
2SD2088
10000
5000
3000
Common emitter
VCE = 2 V
hFE – IC
1000
500
300
Ta = 100°C
55
25
100
50
30
0.01
0.03 0.1 0.3
1
Collector current IC (A)
35
IC – VBE
2.0
Common emitter
VCE = 2 V
1.6
1.2
Ta = 100°C
0.8
0.4
55
25
0
0 0.8 1.6 2.4 3.2 4.0
Base-emitter voltage VBE (V)
VBE (sat) – IC
5 Common emitter
IC/IB = 1000
3
Ta = 55°C
25
100
1
0.3
0.5
1
Collector current IC (A)
3
PC – Ta
2.0
1.5
1.0
0.5
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
3 2009-12-21

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Un datasheet est un document fourni par le constructeur du composant, où figurent toutes les données techniques sur le produit: puissance dissipée, courant maximal, tension de seuil, tension de claquage, température de stockage, etc.


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