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PDF A3R1GE40JBF Fiche technique - Zentel

Numéro de référence A3R1GE40JBF
Description 1Gb DDRII Synchronous DRAM
Fabricant Zentel 
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A3R1GE40JBF Datasheet, Description
A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
1Gb DDRII SDRAM Specification
A3R1GE30JBF
A3R1GE40JBF
Zentel Electronics Corp.
Revision 1.0
Dec., 2014
A3R1GE40JBF Fiche technique
A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
Ordering Information
Part number
A3R1GE30JBF-AH
A3R1GE30JBF-AHI
A3R1GE30JBF-AHA
A3R1GE30JBF-8E
A3R1GE30JBF-8EI
A3R1GE30JBF-8EA
A3R1GE40JBF-AH
A3R1GE40JBF-AHI
A3R1GE40JBF-AHA
A3R1GE40JBF-8E
A3R1GE40JBF-8EI
A3R1GE40JBF-8EA
Organization
(words × bits)
128M × 8
64M × 16
Internal
Banks
8
8
Speed bin
(CL-tRCD-tRP)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2-1066 (7-7-7)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
DDR2- 800 (5-5-5)
Package
60-ball FBGA
84-ball FBGA
Grade
Commercial
Industrial
Automotive
Commercial
Industrial
Automotive
Commercial
Industrial
Automotive
Commercial
Industrial
Automotive
Part Number
A 3 R 1G E 4 0J BF - 8E I
Operating
Temperature
Speed
Package Type
Blank: Commercial (0 ~ 95)
I: Industrial (-40 ~ 95)
A: Automotive (-40 ~ 105)
8E: DDR2-800
AH: DDR2-1066
BF: FBGA
Die version
IO Configuration
Classification
0J: Version 0J
3: x8
4: x16
E: DDR2
Density
1G: 1Gbits
Interface
R: SSTL-18
Product line
3: DRAM
Zentel memory
Revision 1.0
Page 2 / 72
Dec., 2014

3 Page

A3R1GE40JBF pdf
A3R1GE30JBF
A3R1GE40JBF
1Gb DDRII Synchronous DRAM
Electrical Specifications
z All voltages are referenced to VSS (GND)
z Execute power-up and Initialization sequence before proper device operation is achieved
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Note
Power supply voltage
VDD
-1.0 to +2.3 V
1
Power supply voltage for output
VDDQ
-0.5 to +2.3 V
1
Power supply voltage for DLL
VDDL
-0.5 to +2.3 V
1
Input voltage
VIN -0.5 to +2.3 V
1
Output voltage
VOUT
-0.5 to +2.3 V
1
Storage temperature
Tstg - 55 to +150 o C
1,2
Power dissipation
PD 1.0 W
1
Notes: 1.Stresses greater than those listed under Absolute Maximum ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Operating case temperature (Commercial)
Operating case temperature (Industrial)
Operating case temperature (Automotive)
Symbol
TC
TC
TC
Rating
0 to +95
-40 to +95
-40 to +105
Unit
oC
oC
oC
Note
1, 2, 4
1, 3, 4
1, 3, 4
Notes : 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0 to +85with full AC and DC specifications.
3. Supporting -40 to +85with full AC and DC specifications.
4. Supporting up to +85and being able to extend to +95or +105(Automotive grade only)
with doubling auto-refresh commands in frequency to a 32ms period (tREFI = 3.9μs) and higher
temperature Self-Refresh entry via A7 “1” on EMRS (2).
Revision 1.0
Page 5 / 72
Dec., 2014

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